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MUN5236DW1T1G

ON Semiconductor MUN5236DW1T1G

Part Number:
MUN5236DW1T1G
Manufacturer:
ON Semiconductor
Ventron No:
2462141-MUN5236DW1T1G
Description:
TRANS 2NPN PREBIAS 0.25W SC88
ECAD Model:
Datasheet:
MUN5236DW1T1G

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Specifications
ON Semiconductor MUN5236DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5236DW1T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MUN52**DW1T
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    187mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • hFE Min
    80
  • Resistor - Base (R1)
    100k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    100k Ω
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
MUN5236DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5236DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5236DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5236DW1T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Product Comparison
The three parts on the right have similar specifications to MUN5236DW1T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Factory Lead Time
    View Compare
  • MUN5236DW1T1G
    MUN5236DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    260
    100mA
    40
    MUN52**DW1T
    6
    2
    NPN
    Dual
    187mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    80
    100k Ω
    100mA
    100k Ω
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • MUN5316DW1T1
    MUN5316DW1T1
    ON Semiconductor
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    Tape & Reel (TR)
    2009
    e0
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn80Pb20)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    240
    100mA
    30
    MUN53**DW1
    6
    2
    NPN, PNP
    Dual
    187mW
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    250mV
    100mA
    160 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    4.7k Ω
    100mA
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    not_compliant
    R-PDSO-G6
    Not Qualified
    -
    MUN5236DW1T1G vs MUN5316DW1T1
  • MUN5234DW1T1
    MUN5234DW1T1
    ON Semiconductor
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn/Pb)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 2.14
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    240
    100mA
    30
    MUN52**DW1T
    6
    2
    NPN
    Dual
    187mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    22k Ω
    100mA
    47k Ω
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    not_compliant
    -
    Not Qualified
    -
    MUN5236DW1T1G vs MUN5234DW1T1
  • MUN5332DW1T1G
    MUN5332DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO 1
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    260
    100mA
    40
    MUN53**DW1
    6
    2
    NPN, PNP
    Dual
    187mW
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    50V
    100mA
    15 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    15
    4.7k Ω
    100mA
    4.7k Ω
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    2 Weeks
    MUN5236DW1T1G vs MUN5332DW1T1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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