MTD8600N-T

Marktech Optoelectronics MTD8600N-T

Part Number:
MTD8600N-T
Manufacturer:
Marktech Optoelectronics
Ventron No:
4446385-MTD8600N-T
Description:
PHOTOTRANS 880NM DOME CLR TO-18
ECAD Model:
Datasheet:
MTD8600N-T

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Specifications
Marktech Optoelectronics MTD8600N-T technical specifications, attributes, parameters and parts with similar specifications to Marktech Optoelectronics MTD8600N-T.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-18-2 Metal Can
  • Operating Temperature
    -30°C~100°C TA
  • Packaging
    Bulk
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    Photo Transistors
  • Max Power Dissipation
    250mW
  • Orientation
    Top View
  • Reach Compliance Code
    unknown
  • Viewing Angle
    24°
  • Power - Max
    250mW
  • Max Collector Current
    50mA
  • Collector Emitter Breakdown Voltage
    30V
  • Wavelength
    880nm
  • On-State Current-Max
    0.05A
  • Dark Current
    100nA
  • Current - Dark (Id) (Max)
    100nA
  • RoHS Status
    RoHS Compliant
Description
MTD8600N-T Overview
This product is manufactured by Marktech Optoelectronics and belongs to the category of Optical Sensors - Phototransistors. The images we provide are for reference only, for detailed product information please see specification sheet MTD8600N-T or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MTD8600N-T. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MTD8600N-T More Descriptions
SENSOR PHOTO 880NM TOP TO18-2
Product Comparison
The three parts on the right have similar specifications to MTD8600N-T.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Max Power Dissipation
    Orientation
    Reach Compliance Code
    Viewing Angle
    Power - Max
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Wavelength
    On-State Current-Max
    Dark Current
    Current - Dark (Id) (Max)
    RoHS Status
    View Compare
  • MTD8600N-T
    MTD8600N-T
    12 Weeks
    Through Hole
    Through Hole
    TO-18-2 Metal Can
    -30°C~100°C TA
    Bulk
    2011
    Active
    1 (Unlimited)
    Photo Transistors
    250mW
    Top View
    unknown
    24°
    250mW
    50mA
    30V
    880nm
    0.05A
    100nA
    100nA
    RoHS Compliant
    -
  • MTD8000N4-T
    12 Weeks
    Through Hole
    Through Hole
    TO-206AA, TO-18-3 Metal Can
    -30°C~100°C TA
    Bulk
    2011
    Active
    1 (Unlimited)
    Photo Transistors
    150mW
    Top View
    -
    24°
    150mW
    50mA
    30V
    880nm
    0.05A
    100nA
    100nA
    RoHS Compliant
  • MTD8600T4-T
    12 Weeks
    Through Hole
    Through Hole
    TO-206AA, TO-18-3 Metal Can
    -30°C~100°C TA
    Bulk
    2011
    Active
    1 (Unlimited)
    Photo Transistors
    250mW
    Top View
    unknown
    110°
    250mW
    50mA
    30V
    880nm
    0.05A
    100nA
    100nA
    RoHS Compliant
  • MTD8600T-T
    12 Weeks
    Through Hole
    Through Hole
    TO-18-2 Metal Can
    -30°C~100°C TA
    Bulk
    2011
    Active
    1 (Unlimited)
    Photo Transistors
    250mW
    Top View
    unknown
    110°
    250mW
    50mA
    30V
    880nm
    0.05A
    100nA
    100nA
    RoHS Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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