Micron Technology Inc. MT47H32M16NF-25E:H
- Part Number:
- MT47H32M16NF-25E:H
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3232147-MT47H32M16NF-25E:H
- Description:
- IC SDRAM 512MBIT 400MHZ 84FBGA
- ECAD Model:
-
- Datasheet:
- MT47H32M16NF-25E:H
Micron Technology Inc. MT47H32M16NF-25E:H technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H32M16NF-25E:H.
- Factory Lead Time16 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Number of Pins84
- Operating Temperature0°C~85°C TC
- PackagingBulk
- Published2014
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)30
- Base Part NumberMT47H32M16
- Pin Count84
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size512Mb 32M x 16
- Number of Ports1
- Memory TypeVolatile
- Supply Current-Max0.215mA
- Access Time400ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization32MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Address Bus Width13b
- Density512 Mb
- Standby Current-Max0.01A
- Max Frequency400MHz
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height1.2mm
- Length12.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
MT47H32M16NF-25E:H Overview
The MT47H32M16 is a memory module that has a total of 84 pins, with a data bus width of 16 bits. The terminal position for this module is at the bottom, making it easier to install and connect to other components. It has a supply voltage range of 1.7V to 1.8V, ensuring stable and efficient performance. The reflow temperature-max (s) is 30, which means that the module can withstand high temperatures without any damage. The output characteristics of this module are 3-STATE, which allows for a high level of flexibility in terms of data transfer. Additionally, the I/O type is COMMON, and the sequential burst length is 48, making it suitable for a wide range of applications.
MT47H32M16NF-25E:H Features
Package / Case: 84-TFBGA
84 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H32M16NF-25E:H Applications
There are a lot of Micron Technology Inc. MT47H32M16NF-25E:H Memory applications.
personal digital assistants
eSRAM
networks
nonvolatile BIOS memory
Camcorders
DVD disk buffer
data buffer
Cache memory
workstations,
multimedia computers
The MT47H32M16 is a memory module that has a total of 84 pins, with a data bus width of 16 bits. The terminal position for this module is at the bottom, making it easier to install and connect to other components. It has a supply voltage range of 1.7V to 1.8V, ensuring stable and efficient performance. The reflow temperature-max (s) is 30, which means that the module can withstand high temperatures without any damage. The output characteristics of this module are 3-STATE, which allows for a high level of flexibility in terms of data transfer. Additionally, the I/O type is COMMON, and the sequential burst length is 48, making it suitable for a wide range of applications.
MT47H32M16NF-25E:H Features
Package / Case: 84-TFBGA
84 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H32M16NF-25E:H Applications
There are a lot of Micron Technology Inc. MT47H32M16NF-25E:H Memory applications.
personal digital assistants
eSRAM
networks
nonvolatile BIOS memory
Camcorders
DVD disk buffer
data buffer
Cache memory
workstations,
multimedia computers
MT47H32M16NF-25E:H More Descriptions
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
EAR99 Surface Mount MT47H32M16 Bulk ic memory 400MHz 400ps 1.2mm 0.01A
DRAM, DDR2 SDRAM, 512Mb, x16, 84-ball FBGA, RoHSMicron SCT
DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84
IC DRAM 512MBIT PARALLEL 84FBGA
French Electronic Distributor since 1988
DRAM, 32M X 16BIT, 0 TO 85DEG C;
FUSE BRD MNT 7A 125VAC/VDC 2SMD
Dram, 32M X 16Bit, 0 To 85Deg C; Dram Type:Ddr2; Memory Configuration:32M X 16Bit; Clock Frequency Max:400Mhz; Ic Case/Package:Tfbga; No. Of Pins:84Pins; Supply Voltage Nom:1.8V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron MT47H32M16NF-25E:H
EAR99 Surface Mount MT47H32M16 Bulk ic memory 400MHz 400ps 1.2mm 0.01A
DRAM, DDR2 SDRAM, 512Mb, x16, 84-ball FBGA, RoHSMicron SCT
DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84
IC DRAM 512MBIT PARALLEL 84FBGA
French Electronic Distributor since 1988
DRAM, 32M X 16BIT, 0 TO 85DEG C;
FUSE BRD MNT 7A 125VAC/VDC 2SMD
Dram, 32M X 16Bit, 0 To 85Deg C; Dram Type:Ddr2; Memory Configuration:32M X 16Bit; Clock Frequency Max:400Mhz; Ic Case/Package:Tfbga; No. Of Pins:84Pins; Supply Voltage Nom:1.8V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron MT47H32M16NF-25E:H
The three parts on the right have similar specifications to MT47H32M16NF-25E:H.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeSupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxMax FrequencyI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeightLengthRadiation HardeningRoHS StatusClock FrequencySeriesView Compare
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MT47H32M16NF-25E:H16 WeeksCopper, Silver, TinSurface MountSurface Mount84-TFBGA840°C~85°C TCBulk2014e1yesActive3 (168 Hours)84EAR99Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)AUTO/SELF REFRESH8542.32.00.28SDRAM - DDR21.7V~1.9VBOTTOM26011.8V0.8mm30MT47H32M16841.8V1.9V1.7V512Mb 32M x 161Volatile0.215mA400psDRAMParallel16b32MX163-STATE1615ns13b512 Mb0.01A400MHzCOMMON819248481.2mm12.5mmNoROHS3 Compliant--- -
---Surface Mount60-FBGA-0°C~85°C TCTape & Reel (TR)2008--Obsolete3 (168 Hours)-----SDRAM - DDR21.7V~1.9V------MT47H64M8----512Mb 64M x 8-Volatile-400psDRAMParallel----15ns-----------ROHS3 Compliant400MHz-
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111 Weeks--Surface Mount84-TFBGA--40°C~85°C TATape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-----------1Gb 64M x 16-Volatile-400psDRAMParallel----15ns-----------ROHS3 Compliant400MHzAutomotive, AEC-Q100
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111 Weeks--Surface Mount60-TFBGA-0°C~85°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-----------512M 64M x 8-Volatile-400psDRAMParallel----15ns-----------ROHS3 Compliant400MHz-
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Surface Mount 84 Pin Memory IC MT47H64M16 1 Gb kb 12.5mm mm 160mA mA
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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