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MT47H128M8SH-25E AIT:M

Micron Technology Inc. MT47H128M8SH-25E AIT:M

Part Number:
MT47H128M8SH-25E AIT:M
Manufacturer:
Micron Technology Inc.
Ventron No:
3233454-MT47H128M8SH-25E AIT:M
Description:
IC SDRAM 1GBIT 400MHZ 60FBGA
ECAD Model:
Datasheet:
MT47H128M8SH-25E AIT:M

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Specifications
Micron Technology Inc. MT47H128M8SH-25E AIT:M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H128M8SH-25E AIT:M.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    60-TFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -40°C~95°C TC
  • Packaging
    Tray
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    60
  • Additional Feature
    AUTO/SELF REFRESH
  • Technology
    SDRAM - DDR2
  • Voltage - Supply
    1.7V~1.9V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    MT47H128M8
  • JESD-30 Code
    R-PBGA-B60
  • Supply Voltage-Max (Vsup)
    1.9V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    1Gb 128M x 8
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    400MHz
  • Access Time
    400ps
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Organization
    128MX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    15ns
  • Memory Density
    1073741824 bit
  • Screening Level
    AEC-Q100
  • Height Seated (Max)
    1.2mm
  • Length
    10mm
  • Width
    8mm
  • RoHS Status
    ROHS3 Compliant
Description
MT47H128M8SH-25E AIT:M Overview
This product features a surface mount mounting type and is packaged in a tray for convenience and protection during transportation and storage. It offers 60 terminations and 1 function, with a terminal pitch of 0.8mm for secure and efficient connections. The JESD-30 code for this product is R-PBGA-B60, indicating its reliability and compatibility with industry standards. Operating in synchronous mode, this product utilizes dynamic random access memory (DRAM) format with a memory density of 1073741824 bits, providing high-speed and reliable data storage. With a width of 8mm, this product offers a compact yet powerful solution for memory storage needs.

MT47H128M8SH-25E AIT:M Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH


MT47H128M8SH-25E AIT:M Applications
There are a lot of Micron Technology Inc.
MT47H128M8SH-25E AIT:M Memory applications.


cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT47H128M8SH-25E AIT:M More Descriptions
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V Automotive 60-Pin FBGA
DRAM, DDR2 SDRAM, 1Gb, x8, 60-ball FBGA, RoHSMicron SCT
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA84
AUTOMOTIVE LOW-VOLTAGE 6A STEP-D
Dram, 128M X 8Bit, -40 To 95Deg C; Dram Type:Ddr2; Memory Configuration:128M X 8Bit; Clock Frequency Max:400Mhz; Ic Case/Package:Tfbga; No. Of Pins:60Pins; Supply Voltage Nom:1.8V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron MT47H128M8SH-25E AIT:M
Product Comparison
The three parts on the right have similar specifications to MT47H128M8SH-25E AIT:M.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Operating Mode
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Memory Density
    Screening Level
    Height Seated (Max)
    Length
    Width
    RoHS Status
    Number of Pins
    Published
    JESD-609 Code
    Pbfree Code
    ECCN Code
    Terminal Finish
    HTS Code
    Pin Count
    Operating Supply Voltage
    Data Bus Width
    Output Characteristics
    Address Bus Width
    Density
    Max Frequency
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Radiation Hardening
    Lead Free
    View Compare
  • MT47H128M8SH-25E AIT:M
    MT47H128M8SH-25E AIT:M
    Micron Technology Inc.
    4 Weeks
    Surface Mount
    60-TFBGA
    YES
    -40°C~95°C TC
    Tray
    Last Time Buy
    3 (168 Hours)
    60
    AUTO/SELF REFRESH
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.8mm
    NOT SPECIFIED
    MT47H128M8
    R-PBGA-B60
    1.9V
    1.7V
    1Gb 128M x 8
    1
    Volatile
    SYNCHRONOUS
    400MHz
    400ps
    DRAM
    Parallel
    128MX8
    8
    15ns
    1073741824 bit
    AEC-Q100
    1.2mm
    10mm
    8mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT47H512M4EB-187E:C
    MT47H512M4EB-187E:C
    Micron Technology Inc.
    -
    Surface Mount
    60-TFBGA
    YES
    0°C~85°C TC
    Tray
    Discontinued
    3 (168 Hours)
    60
    AUTO/SELF REFRESH
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    260
    1
    1.8V
    0.8mm
    30
    MT47H512M4
    -
    1.9V
    1.7V
    2Gb 512M x 4
    1
    Volatile
    -
    533MHz
    350ps
    DRAM
    Parallel
    512MX4
    4
    15ns
    -
    -
    1.2mm
    11.5mm
    -
    ROHS3 Compliant
    60
    2012
    e1
    yes
    EAR99
    TIN SILVER COPPER
    8542.32.00.36
    60
    1.8V
    4b
    3-STATE
    18b
    2 Gb
    1.066GHz
    COMMON
    8192
    48
    48
    No
    Lead Free
    MT47H128M8SH-25E AIT:M vs MT47H512M4EB-187E:C
  • MT47H32M8BP-3:B TR
    MT47H32M8BP-3:B TR
    Micron Technology Inc.
    -
    Surface Mount
    60-FBGA
    -
    0°C~85°C TC
    Tape & Reel (TR)
    Obsolete
    3 (168 Hours)
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    MT47H32M8B
    -
    -
    -
    256Mb 32M x 8
    -
    Volatile
    -
    333MHz
    450ps
    DRAM
    Parallel
    -
    -
    15ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    2005
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MT47H128M8SH-25E AIT:M vs MT47H32M8BP-3:B TR
  • MT47H256M4SH-25E:M TR
    MT47H256M4SH-25E:M TR
    Micron Technology Inc.
    16 Weeks
    Surface Mount
    60-TFBGA
    -
    0°C~85°C TC
    Tape & Reel (TR)
    Active
    3 (168 Hours)
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1Gb 256M x 4
    -
    Volatile
    -
    400MHz
    400ps
    DRAM
    Parallel
    -
    -
    15ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MT47H128M8SH-25E AIT:M vs MT47H256M4SH-25E:M TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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