Micron Technology Inc. MT47H128M8CF-25E:H

Name: MT47H128M8CF-25E:H
Brand: Micron Technology Inc.
SKU: 3244053-MT47H128M8CF-25E:H
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT47H128M8CF-25E:H

Manufacturer:: Micron Technology Inc.

Ventron No:: 3244053-MT47H128M8CF-25E:H

Description:: IC SDRAM 1GBIT 400MHZ 60FBGA

ECAD Model:

Datasheet:: MT47H128M8CF-25E:H

Specifications

Micron Technology Inc. MT47H128M8CF-25E:H technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H128M8CF-25E:H.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
60-TFBGA
Number of Pins
60
Operating Temperature
0°C~85°C TC
Packaging
Tray
Published
2012
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
60
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
AUTO/SELF REFRESH
HTS Code
8542.32.00.32
Technology
SDRAM - DDR2
Voltage - Supply
1.7V~1.9V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
0.8mm
Reflow Temperature-Max (s)
30
Base Part Number
MT47H128M8
Pin Count
60
Operating Supply Voltage
1.8V
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Memory Size
1Gb 128M x 8
Number of Ports
1
Nominal Supply Current
125mA
Memory Type
Volatile
Clock Frequency
400MHz
Access Time
400ps
Memory Format
DRAM
Memory Interface
Parallel
Data Bus Width
8b
Organization
128MX8
Output Characteristics
3-STATE
Memory Width
8
Write Cycle Time - Word, Page
15ns
Address Bus Width
17b
Density
1 Gb
Max Frequency
800MHz
I/O Type
COMMON
Refresh Cycles
8192
Sequential Burst Length
48
Interleaved Burst Length
48
Height Seated (Max)
1.2mm
Length
10mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MT47H128M8CF-25E:H Overview
The operating temperature for this particular product is between 0°C and 85°C, making it suitable for use in a wide range of environments. It has a total of 60 terminations, allowing for multiple connections and functionality. With a clock frequency of 400MHz, this product offers fast processing speeds. The memory type is volatile, meaning that it requires a continuous power supply to retain data. It has a memory interface of parallel, providing efficient data transfer. With a density of 1 Gb, this product offers ample storage capacity. The sequential and interleaved burst lengths are both 48, ensuring smooth and consistent data transfer. Lastly, the maximum seated height is 1.2mm, making it compact and convenient for installation in various devices.

MT47H128M8CF-25E:H Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON

MT47H128M8CF-25E:H Applications
There are a lot of Micron Technology Inc. MT47H128M8CF-25E:H Memory applications.

Camcorders
nonvolatile BIOS memory
networks
multimedia computers
eSRAM
cell phones
personal computers
main computer memory
mainframes
printers

MT47H128M8CF-25E:H More Descriptions

DRAM Chip DDR2 SDRAM 1G-Bit 128Mx8 1.8V 60-Pin FBGA Tray
U68A .128MX8 DDR2 SDRAM PLASTIC COMMERCIAL PBF FBGA 1.8V
EAR99 Surface Mount MT47H128M8 Tray ic memory 400MHz 400ps 10mm 125mA
DRAM, DDR2 SDRAM, 1Gb, x8, 60-ball FBGA, RoHSMicron SCT
IC DDR2 SDRAM 1GBIT 2.5NS 60FBGA
Product Description Demo for Development.
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to MT47H128M8CF-25E:H.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Nominal Supply Current

Memory Type

Clock Frequency

Access Time

Memory Format

Memory Interface

Data Bus Width

Organization

Output Characteristics

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Max Frequency

I/O Type

Refresh Cycles

Sequential Burst Length

Interleaved Burst Length

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Series

View Compare
MT47H128M8CF-25E:H

Micron Technology Inc.

Surface Mount

Surface Mount

60-TFBGA

60

0°C~85°C TC

Tray

2012

e1

yes

Obsolete

3 (168 Hours)

60

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH

8542.32.00.32

SDRAM - DDR2

1.7V~1.9V

BOTTOM

260

1

1.8V

0.8mm

30

MT47H128M8

60

1.8V

1.9V

1.7V

1Gb 128M x 8

1

125mA

Volatile

400MHz

400ps

DRAM

Parallel

8b

128MX8

3-STATE

8

15ns

17b

1 Gb

800MHz

COMMON

8192

48

48

1.2mm

10mm

No

ROHS3 Compliant

Lead Free

-

-

-
MT47H64M8B6-25E L:D TR

Micron Technology Inc.

-

Surface Mount

60-FBGA

-

0°C~85°C TC

Tape & Reel (TR)

2008

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

SDRAM - DDR2

1.7V~1.9V

-

-

-

-

-

-

MT47H64M8

-

-

-

-

512Mb 64M x 8

-

-

Volatile

400MHz

400ps

DRAM

Parallel

-

-

-

-

15ns

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

MT47H128M8CF-25E:H vs MT47H64M8B6-25E L:D TR
MT47H64M16NF-25E IT:M TR

Micron Technology Inc.

-

Surface Mount

84-TFBGA

-

-40°C~85°C TA

Tape & Reel (TR)

-

-

-

Active

3 (168 Hours)

-

-

-

-

-

SDRAM - DDR2

1.7V~1.9V

-

-

-

-

-

-

-

-

-

-

-

1Gb 64M x 16

-

-

Volatile

400MHz

400ps

DRAM

Parallel

-

-

-

-

15ns

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

111 Weeks

Automotive, AEC-Q100

MT47H128M8CF-25E:H vs MT47H64M16NF-25E IT:M TR
MT47H128M8SH-25E IT:M TR

Micron Technology Inc.

-

Surface Mount

60-TFBGA

-

-40°C~95°C TC

Tape & Reel (TR)

-

-

-

Active

3 (168 Hours)

-

-

-

-

-

SDRAM - DDR2

1.7V~1.9V

-

-

-

-

-

-

-

-

-

-

-

1Gb 128M x 8

-

-

Volatile

400MHz

400ps

DRAM

Parallel

-

-

-

-

15ns

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

12 Weeks

-

MT47H128M8CF-25E:H vs MT47H128M8SH-25E IT:M TR