NXP USA Inc. MRF8S21100HSR3
- Part Number:
- MRF8S21100HSR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2476247-MRF8S21100HSR3
- Description:
- FET RF 65V 2.17GHZ NI780S
- Datasheet:
- MRF8S21100HSR3
NXP USA Inc. MRF8S21100HSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8S21100HSR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-780S
- PackagingTape & Reel (TR)
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- Frequency2.17GHz
- Base Part NumberMRF8S21100
- Current - Test700mA
- Transistor TypeLDMOS
- Gain18.3dB
- Power - Output24W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF8S21100HSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8S21100HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8S21100HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8S21100HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8S21100HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8S21100HSR3 More Descriptions
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V
RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793
Trans RF MOSFET N-CH 65V 3-Pin Case 465A-06 T/R
RF MOSFET Transistors HV8 2.1GHZ 100W
RF S BAND, N-CHANNEL POWER MOSFE
RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793
Trans RF MOSFET N-CH 65V 3-Pin Case 465A-06 T/R
RF MOSFET Transistors HV8 2.1GHZ 100W
RF S BAND, N-CHANNEL POWER MOSFE
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