NXP USA Inc. MRF8S18210WHSR3
- Part Number:
- MRF8S18210WHSR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3554124-MRF8S18210WHSR3
- Description:
- FET RF 65V 1.93GHZ NI880XS2
- ECAD Model:
-
- Datasheet:
- MRF8S18210WHSR3
NXP USA Inc. MRF8S18210WHSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8S18210WHSR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-880XS
- Surface MountYES
- PackagingTape & Reel (TR)
- Published2006
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Peak Reflow Temperature (Cel)260
- Frequency1.93GHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF8S18210
- Operating Temperature (Max)125°C
- ConfigurationSingle
- Current - Test1.3A
- Transistor TypeN-Channel
- Gain17.8dB
- Power - Output50W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test30V
- RoHS StatusROHS3 Compliant
MRF8S18210WHSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8S18210WHSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8S18210WHSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8S18210WHSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8S18210WHSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8S18210WHSR3 More Descriptions
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg., 30 V
RF Power Transistor,1805 to 1995 MHz, 210 W, Typ Gain in dB is 17.8 @ 1930 MHz, 30 V, LDMOS, SOT1790
Trans RF MOSFET N-CH 65V 3-Pin NI-880XS T/R
RF MOSFET Transistors HV8 1.8GHZ 55W
RF Power Transistor,1805 to 1995 MHz, 210 W, Typ Gain in dB is 17.8 @ 1930 MHz, 30 V, LDMOS, SOT1790
Trans RF MOSFET N-CH 65V 3-Pin NI-880XS T/R
RF MOSFET Transistors HV8 1.8GHZ 55W
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