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MRF8P29300HSR6

NXP USA Inc. MRF8P29300HSR6

Part Number:
MRF8P29300HSR6
Manufacturer:
NXP USA Inc.
Ventron No:
2477461-MRF8P29300HSR6
Description:
FET RF 2CH 65V 2.9GHZ NI1230S
ECAD Model:
Datasheet:
MRF8P29300HSR6

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Specifications
NXP USA Inc. MRF8P29300HSR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8P29300HSR6.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-1230S
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Voltage - Rated
    65V
  • HTS Code
    8541.29.00.75
  • Subcategory
    FET General Purpose Power
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    2.9GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MRF8P29300
  • JESD-30 Code
    R-CDFP-F4
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    225°C
  • Number of Elements
    2
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    100mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS (Dual)
  • Gain
    13.3dB
  • DS Breakdown Voltage-Min
    65V
  • Power - Output
    320W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    30V
  • RoHS Status
    ROHS3 Compliant
Description
MRF8P29300HSR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8P29300HSR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8P29300HSR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8P29300HSR6 More Descriptions
Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1829
Tape & Reel (TR) N-CHANNEL COMMON SOURCE 2ELEMENTS EAR99 RF Mosfet 100mA 320W 13.3dB 2.9GHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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