NXP USA Inc. MRF8P20165WHSR3
- Part Number:
- MRF8P20165WHSR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477505-MRF8P20165WHSR3
- Description:
- FET RF 2CH 65V 2.01GHZ NI780S4
- Datasheet:
- MRF8P20165WH
NXP USA Inc. MRF8P20165WHSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8P20165WHSR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-780S-4
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency1.98GHz~2.01GHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF8P20165
- JESD-30 CodeR-CDFP-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)125°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test550mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain14.8dB
- DS Breakdown Voltage-Min65V
- Power - Output37W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF8P20165WHSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8P20165WHSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8P20165WHSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8P20165WHSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8P20165WHSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8P20165WHSR3 More Descriptions
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1995 MHz, 37 W Avg., 28 V
RF Power Transistor,1930 to 1995 MHz, 104 W, Typ Gain in dB is 16.3 @ 1960 MHz, 28 V, LDMOS, SOT1826
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
RF MOSFET Transistors HV8 2GHZ 165W NI780S-4
FET RF 2CH 65V 2.01GHZ NI780S4
RF Power Transistor,1930 to 1995 MHz, 104 W, Typ Gain in dB is 16.3 @ 1960 MHz, 28 V, LDMOS, SOT1826
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
RF MOSFET Transistors HV8 2GHZ 165W NI780S-4
FET RF 2CH 65V 2.01GHZ NI780S4
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