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MRF8P20140WHR3

NXP USA Inc. MRF8P20140WHR3

Part Number:
MRF8P20140WHR3
Manufacturer:
NXP USA Inc.
Ventron No:
2477307-MRF8P20140WHR3
Description:
FET RF 2CH 65V 1.91GHZ NI780-4
ECAD Model:
Datasheet:
MRF8P20140WHR3

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Specifications
NXP USA Inc. MRF8P20140WHR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8P20140WHR3.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI780-4
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Voltage - Rated
    65V
  • HTS Code
    8541.29.00.75
  • Subcategory
    FET General Purpose Power
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    1.88GHz~1.91GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MRF8P20140
  • JESD-30 Code
    R-CDFM-F4
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    125°C
  • Number of Elements
    2
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    500mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS (Dual)
  • Gain
    16dB
  • DS Breakdown Voltage-Min
    65V
  • Power - Output
    24W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
MRF8P20140WHR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8P20140WHR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8P20140WHR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8P20140WHR3 More Descriptions
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V
RF Power Transistor,1880 to 2025 MHz, 140 W, Typ Gain in dB is 16 @ 1920 MHz, 28 V, LDMOS, SOT1827
Transistor RF FET N-CH 65V 1880MHz to 2025MHz 4-Pin NI-780H T/R
RF MOSFET Transistors HV8 2GHZ 24W NI780-4
IC CTLR SYNC BUCK IMVP6.5 32-QFN
FET RF 2CH 65V 1.91GHZ NI780-4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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