ON Semiconductor MMUN2232LT1G
- Part Number:
- MMUN2232LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2470320-MMUN2232LT1G
- Description:
- TRANS PREBIAS NPN 246MW SOT23-3
- Datasheet:
- MMUN2232LT1G
ON Semiconductor MMUN2232LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2232LT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation246mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMUN22**L
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation400mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- hFE Min15
- Resistor - Base (R1)4.7 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)4.7 k Ω
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMUN2232LT1G Description
The ON Semiconductor MMUN2232LT1G is an NPN digital transistor in 3 pin SOT-23 (TO?236) package. The digital transistor is designed to replace a single device and its external resistor bias network
MMUN2232LT1G Features
The base input resistor is 10Kohm
The base-emitter resistor is 10kohm
Collector emitter voltage VCEO of 50VDC
Simplifies circuit design
Compact board space
Reduced component count
AEC-Q101 qualified
The continuous collector current of 100mAdc
MMUN2232LT1G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
The ON Semiconductor MMUN2232LT1G is an NPN digital transistor in 3 pin SOT-23 (TO?236) package. The digital transistor is designed to replace a single device and its external resistor bias network
MMUN2232LT1G Features
The base input resistor is 10Kohm
The base-emitter resistor is 10kohm
Collector emitter voltage VCEO of 50VDC
Simplifies circuit design
Compact board space
Reduced component count
AEC-Q101 qualified
The continuous collector current of 100mAdc
MMUN2232LT1G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
MMUN2232LT1G More Descriptions
MMUN2232LT1G NPN Digital Transistor; 100mA 50V 4.7 kOhms; Ratio Of 1; 3-Pin SOT-23
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
15@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Al
NPN Bipolar Digital Transistor (BRT)
Transistor, 50V, 4.7/4.7KOHM, SOT23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:4.7Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2232LT1G.
TRANS, 50V, 4.7/4.7KOHM, SOT23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
15@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Al
NPN Bipolar Digital Transistor (BRT)
Transistor, 50V, 4.7/4.7KOHM, SOT23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:4.7Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2232LT1G.
TRANS, 50V, 4.7/4.7KOHM, SOT23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
The three parts on the right have similar specifications to MMUN2232LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishReach Compliance CodeQualification StatusTransistor Element MaterialConfigurationPower - MaxJESD-30 CodeJEDEC-95 CodeView Compare
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MMUN2232LT1GACTIVE (Last Updated: 1 day ago)6 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2003e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V246mWDUALGULL WING260100mA40MMUN22**L3100mA50V1NPNSingle400mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V250mV50V154.7 k Ω100mA4.7 k Ω940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----------
-
---Surface MountTO-236-3, SC-59, SOT-23-3-3Cut Tape (CT)2007e0-Obsolete1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V246mWDUALGULL WING240100mA30MMUN22**L3--1NPNSingle246mWSWITCHING-NPN - Pre-Biased50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V--3510 k Ω100mA10 k Ω-----Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliantNot Qualified-----
-
ACTIVE (Last Updated: 1 day ago)4 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99---BIP General Purpose Small Signal-246mWDUALGULL WINGNOT SPECIFIED-NOT SPECIFIED-3--1NPN--SWITCHINGHalogen FreeNPN - Pre-Biased250mV100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V--802.2 k Ω-47 k Ω-----ROHS3 CompliantLead Free-Tin (Sn)--SILICONSINGLE WITH BUILT-IN RESISTOR246mW--
-
---Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2007e0-Obsolete1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V246mWDUALGULL WING240100mA30MMUN22**L3--1NPNSingle246mWSWITCHING-NPN - Pre-Biased250mV100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V--3510 k Ω100mA10 k Ω-----Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn80Pb20)not_compliantNot Qualified---R-PDSO-G3TO-236AB
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