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MMUN2230LT1G

ON Semiconductor MMUN2230LT1G

Part Number:
MMUN2230LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2472883-MMUN2230LT1G
Description:
TRANS PREBIAS NPN 246MW SOT23-3
ECAD Model:
Datasheet:
MMUN2230LT1G

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Specifications
ON Semiconductor MMUN2230LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2230LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    36 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    246mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMUN22**L
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    246mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    NPN - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    3 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Resistor - Base (R1)
    1 k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    1 k Ω
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
MMUN2230LT1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MMUN2230LT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMUN2230LT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMUN2230LT1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Trans Digital BJT NPN 50V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
NPN Bipolar Digital Transistor (BRT)
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Rf, Npn, 50V, 0.1A, Sot-23; Digital Transistor Polarity:Single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:1Kohm; Base-Emitter Resistor R2:1Kohm; Resistor Rohs Compliant: Yes |Onsemi MMUN2230LT1G
Product Comparison
The three parts on the right have similar specifications to MMUN2230LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    RoHS Status
    Lead Free
    Mount
    Reach Compliance Code
    JESD-30 Code
    JEDEC-95 Code
    hFE Min
    View Compare
  • MMUN2230LT1G
    MMUN2230LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    36 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2001
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    50V
    246mW
    DUAL
    GULL WING
    260
    100mA
    40
    MMUN22**L
    3
    Not Qualified
    1
    NPN
    Single
    246mW
    SWITCHING
    Halogen Free
    NPN - Pre-Biased
    250mV
    100mA
    3 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA
    50V
    1 k Ω
    100mA
    1 k Ω
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • MMUN2211LT3
    MMUN2211LT3
    ON Semiconductor
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    Tape & Reel (TR)
    2007
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn80Pb20)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    50V
    246mW
    DUAL
    GULL WING
    240
    100mA
    30
    MMUN22**L
    3
    Not Qualified
    1
    NPN
    Single
    246mW
    SWITCHING
    -
    NPN - Pre-Biased
    250mV
    100mA
    35 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    10 k Ω
    100mA
    10 k Ω
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    not_compliant
    R-PDSO-G3
    TO-236AB
    35
    MMUN2230LT1G vs MMUN2211LT3
  • MMUN2231LT1
    MMUN2231LT1
    ON Semiconductor
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    Tape & Reel (TR)
    2007
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    50V
    246mW
    DUAL
    GULL WING
    240
    100mA
    30
    MMUN22**L
    3
    Not Qualified
    1
    NPN
    Single
    246mW
    SWITCHING
    -
    NPN - Pre-Biased
    250mV
    100mA
    8 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA
    50V
    2.2 k Ω
    100mA
    2.2 k Ω
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    not_compliant
    R-PDSO-G3
    TO-236AB
    8
    MMUN2230LT1G vs MMUN2231LT1
  • MMUN2130LT1G
    MMUN2130LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    2 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO 1
    BIP General Purpose Small Signal
    -50V
    246mW
    DUAL
    GULL WING
    260
    -100mA
    40
    MMUN21**L
    3
    Not Qualified
    1
    PNP
    Single
    246mW
    SWITCHING
    Halogen Free
    PNP - Pre-Biased
    250mV
    100mA
    3 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA
    50V
    1 k Ω
    100mA
    1 k Ω
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    MMUN2230LT1G vs MMUN2130LT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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