Diodes Incorporated MMDT4413-7-F
- Part Number:
- MMDT4413-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2844237-MMDT4413-7-F
- Description:
- TRANS NPN/PNP 40V 0.6A SOT363
- Datasheet:
- MMDT4413-7-F
Diodes Incorporated MMDT4413-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT4413-7-F.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryBIP General Purpose Small Signals
- Voltage - Rated DC40V
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Frequency250MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMDT4413
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Transistor TypeNPN, PNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 1V / 100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage750mV
- Max Breakdown Voltage40V
- Frequency - Transition250MHz 200MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Continuous Collector Current600mA
- Turn On Time-Max (ton)35ns
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMDT4413-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT4413-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT4413-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT4413-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT4413-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMDT4413-7-F More Descriptions
MMDT4413 Series NPN/PNP 40 V 200 mW Small Signal Transistor SMT - SOT-363
Trans GP BJT NPN/PNP 40V 0.6A SOT363 | Diodes Inc MMDT4413-7-F
MMDT4413-7-F,BIPOLAR TRANSISTO R DUAL MICROCONTROLLER, PDIP4
Transistor, NPN/PNP, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:200mW; DC
TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 200mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 750mV; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Trans GP BJT NPN/PNP 40V 0.6A SOT363 | Diodes Inc MMDT4413-7-F
MMDT4413-7-F,BIPOLAR TRANSISTO R DUAL MICROCONTROLLER, PDIP4
Transistor, NPN/PNP, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:200mW; DC
TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 200mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 750mV; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
The three parts on the right have similar specifications to MMDT4413-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminationCurrent - Collector Cutoff (Max)Current - Collector (Ic) (Max)Max Junction Temperature (Tj)Surface MountJESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Power Dissipation-Max (Abs)Turn Off Time-Max (toff)View Compare
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MMDT4413-7-F15 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-65°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)BIP General Purpose Small Signals40V200mWGULL WING260600mA250MHz40MMDT441362NPN, PNPDual200mWSWITCHING250MHzNPN, PNP40V600mA100 @ 150mA 1V / 100 @ 150mA 2V750mV @ 50mA, 500mA40V250MHz750mV40V250MHz 200MHz60V6V100600mA35ns1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free---------------
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19 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR99-Other Transistors-150V200mWGULL WING260-200mA300MHz40MMDT540162PNPDual200mWSWITCHING100MHz2 PNP (Dual)-150V-200mA60 @ 10mA 5V500mV @ 5mA, 50mA-150V100MHz-500mV150V--160V-6V50-200mA-1.1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead FreeTinSMD/SMT50nA ICBO200mA150°C---------
-
12 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)Other Transistors--GULL WING260--10MMDT540162---SWITCHING-2 PNP (Dual)--60 @ 10mA 5V500mV @ 5mA, 50mA-100MHz--300MHz----70ns-----ROHS3 Compliant---50nA ICBO200mA-YESR-PDSO-G6Not QualifiedSEPARATE, 2 ELEMENTS200mWPNP150V0.2W300ns
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19 WeeksSurface MountSurface MountSOT-563, SOT-66663.005049mgSILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)Other Transistors-40V150mWFLAT260-200mA250MHz40MMDT3906VC62PNPDual150mWSWITCHING250MHz2 PNP (Dual)40V200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V250MHz-400mV40V-40V5V60-70ns600μm1.6mm1.2mmNo SVHCNoROHS3 CompliantLead Free-SMD/SMT-----------300ns
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