Diodes Incorporated MMDT5401-7-F
- Part Number:
- MMDT5401-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3069244-MMDT5401-7-F
- Description:
- TRANS 2PNP 150V 0.2A SOT363
- Datasheet:
- MMDT5401-7-F
Diodes Incorporated MMDT5401-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT5401-7-F.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-150V
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-200mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMDT5401
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)-150V
- Max Collector Current-200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage-150V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage150V
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-6V
- hFE Min50
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current-200mA
- Height1.1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMDT5401-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT5401-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT5401-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT5401-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT5401-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMDT5401-7-F More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 2-Element, PNP, Silicon
MMDT5401 Series 150 V 200 mA 200 mW Dual PNP Small Signal Transistor - SOT-363
Trans GP BJT PNP 150V 0.2A 6Pin SOT363 | Diodes Inc MMDT5401-7-F
Trans GP BJT PNP 150V 0.2A 320mW 6-Pin SOT-363 T/R
TRANSISTOR, PNP/PNP, SOT363; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Power Dissipation Pd:200mW; DC Collector Current:-200mA; DC Current Gain hFE:60; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:-500mV; Current Ic Continuous a Max:-200mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:60; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal
MMDT5401 Series 150 V 200 mA 200 mW Dual PNP Small Signal Transistor - SOT-363
Trans GP BJT PNP 150V 0.2A 6Pin SOT363 | Diodes Inc MMDT5401-7-F
Trans GP BJT PNP 150V 0.2A 320mW 6-Pin SOT-363 T/R
TRANSISTOR, PNP/PNP, SOT363; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Power Dissipation Pd:200mW; DC Collector Current:-200mA; DC Current Gain hFE:60; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:-500mV; Current Ic Continuous a Max:-200mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:60; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal
The three parts on the right have similar specifications to MMDT5401-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishJESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)Terminal PositionReference StandardCase ConnectionView Compare
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MMDT5401-7-F19 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6SMD/SMTEAR99Other Transistors-150V200mWGULL WING260-200mA300MHz40MMDT540162PNPDual200mWSWITCHING100MHz2 PNP (Dual)-150V-200mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA-150V200mA100MHz-500mV150V-160V-6V50150°C-200mA1.1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free----------------
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12 Weeks--Surface Mount6-TSSOP, SC-88, SOT-363--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6-EAR99Other Transistors--GULL WING260--10MMDT540162---SWITCHING-2 PNP (Dual)--60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA-200mA100MHz------------ROHS3 Compliant-YESMatte Tin (Sn)R-PDSO-G6Not QualifiedSEPARATE, 2 ELEMENTS200mWPNP150V300MHz0.2W300ns70ns---
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15 Weeks-Surface MountSurface Mount6-XFDFN Exposed Pad6-SILICON-55°C~150°C TJTape & Reel (TR)2016e4-Active1 (Unlimited)6-EAR99--370mWNO LEADNOT SPECIFIED--NOT SPECIFIED--2---SWITCHING-NPN, PNP Complementary300mV200mA100 @ 10mA 1V50nA300mV @ 5mA, 50mA40V-300MHz-40V----------ROHS3 Compliant--Nickel/Palladium/Gold (Ni/Pd/Au)--SEPARATE, 2 ELEMENTS370mWNPN AND PNP-300MHz-250ns70nsDUALAEC-Q101COLLECTOR
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19 Weeks-Surface MountSurface MountSOT-563, SOT-66663.005049mgSILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6SMD/SMTEAR99Other Transistors-40V150mWFLAT260-200mA250MHz40MMDT3906VC62PNPDual150mWSWITCHING250MHz2 PNP (Dual)40V200mA100 @ 10mA 1V-400mV @ 5mA, 50mA40V-250MHz-400mV40V40V5V60--600μm1.6mm1.2mmNo SVHCNoROHS3 CompliantLead Free-Matte Tin (Sn)--------300ns70ns---
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