Diodes Incorporated MMDT4124-7-F
- Part Number:
- MMDT4124-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2460690-MMDT4124-7-F
- Description:
- TRANS 2NPN 25V 0.2A SOT363
- Datasheet:
- MMDT4124-7-F
Diodes Incorporated MMDT4124-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT4124-7-F.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMDT4124
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Transistor Type2 NPN (Dual)
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage25V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Continuous Collector Current200mA
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMDT4124-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT4124-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT4124-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT4124-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT4124-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMDT4124-7-F More Descriptions
MMDT4124 Series 25 V 200 mA Dual NPN Small Signal Transistor - SOT-363
Transistor Dual NPN 25V 0.2A SOT363-6 | Diodes Inc MMDT4124-7-F
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 120; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Transistor Dual NPN 25V 0.2A SOT363-6 | Diodes Inc MMDT4124-7-F
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 120; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
The three parts on the right have similar specifications to MMDT4124-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishTurn On Time-Max (ton)Surface MountJESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Terminal PositionReference StandardCase ConnectionView Compare
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MMDT4124-7-F15 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6SMD/SMTEAR99HIGH RELIABILITYOther Transistors25V200mWGULL WING260200mA300MHz40MMDT412462NPNDual200mWSWITCHING300MHz2 NPN (Dual)25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz300mV25V30V5V120200mA1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free-----------------
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19 Weeks-Surface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6-EAR99-Other Transistors-60V200mWGULL WING260-600mA200MHz40MMDT2907A62PNPDual200mWSWITCHING200MHz2 PNP (Dual)60V600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V60V60V-5V100-600mA1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)45ns--------------
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12 Weeks--Surface Mount6-TSSOP, SC-88, SOT-363--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6-EAR99-Other Transistors--GULL WING260--10MMDT540162---SWITCHING-2 PNP (Dual)--60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA-100MHz-----------ROHS3 Compliant-Matte Tin (Sn)70nsYESR-PDSO-G6Not QualifiedSEPARATE, 2 ELEMENTS200mWPNP150V200mA300MHz0.2W300ns---
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15 Weeks-Surface MountSurface Mount6-XFDFN Exposed Pad6-SILICON-55°C~150°C TJTape & Reel (TR)2016e4-Active1 (Unlimited)6-EAR99---370mWNO LEADNOT SPECIFIED--NOT SPECIFIED--2---SWITCHING-NPN, PNP Complementary300mV200mA100 @ 10mA 1V50nA300mV @ 5mA, 50mA40V300MHz-40V---------ROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)70ns---SEPARATE, 2 ELEMENTS370mWNPN AND PNP--300MHz-250nsDUALAEC-Q101COLLECTOR
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