Diodes Incorporated MMDT2227-7-F
- Part Number:
- MMDT2227-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2460648-MMDT2227-7-F
- Description:
- TRANS NPN/PNP 40V/60V SOT363
- Datasheet:
- MMDT2227-7-F
Diodes Incorporated MMDT2227-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT2227-7-F.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Supplier Device PackageSOT-363
- Weight6.010099mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC40V
- Max Power Dissipation200mW
- Current Rating600mA
- Frequency300MHz
- Base Part NumberMMDT2227
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation200mW
- Turn On Delay Time35 ns
- Power - Max200mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN, PNP
- Turn-Off Delay Time285 ns
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)40V 60V
- Current - Collector (Ic) (Max)600mA
- Max Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage60V
- Frequency - Transition300MHz 200MHz
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Continuous Collector Current600mA
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The Diodes Inc. MMDT2227-7-F is a bipolar transistor array in a SOT363 package. It is a dual NPN/PNP transistor array with a maximum voltage rating of 40V/60V. This device is designed for use in a wide range of applications, including power management, audio amplifiers, and switching circuits. It features low saturation voltage, low noise, and high gain. The device is also RoHS compliant and has a maximum operating temperature of 150°C. This device is suitable for use in a variety of applications, including automotive, consumer electronics, and industrial applications.
MMDT2227-7-F More Descriptions
MMDT2227 Series NPN/PNP 40 V 200 mW Small Signal Transistor SMT - SOT-363
TRANS NPN/PNP 40V/60V SOT363 / Trans GP BJT NPN/PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Transistor NPN/PNP 40/60V 0.6A SOT363-6 | Diodes Inc MMDT2227-7-F
200mW 100@150mA,10V 600mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
Transistor, NPN, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation
TRANSISTOR, NPN, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
TRANS NPN/PNP 40V/60V SOT363 / Trans GP BJT NPN/PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Transistor NPN/PNP 40/60V 0.6A SOT363-6 | Diodes Inc MMDT2227-7-F
200mW 100@150mA,10V 600mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
Transistor, NPN, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation
TRANSISTOR, NPN, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
The three parts on the right have similar specifications to MMDT2227-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTurn On Delay TimePower - MaxGain Bandwidth ProductTransistor TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeECCN CodeTerminal FinishSubcategoryTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusTransistor ApplicationTransition FrequencyTurn Off Time-Max (toff)Turn On Time-Max (ton)Pbfree CodeSurface MountJESD-30 CodeConfigurationPolarity/Channel TypePower Dissipation-Max (Abs)View Compare
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MMDT2227-7-F19 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636SOT-3636.010099mg-55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)6SMD/SMT150°C-55°C40V200mW600mA300MHzMMDT22272NPN, PNPDual200mW35 ns200mW300MHzNPN, PNP285 ns1V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA60V40V 60V600mA300MHz1V60V300MHz 200MHz75V6V100600mA1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free----------------------
-
--Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636-6.010099mg-55°C~150°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)6---40V200mW200mA-MMDT39042NPNDual---300MHz2 NPN (Dual)-300mV200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V----40V-60V6V100200mA1mm2.2mm1.35mmNo SVHC-Non-RoHS CompliantContains LeadSILICONe0EAR99Tin/Lead (Sn85Pb15)Other TransistorsGULL WING235not_compliant106Not QualifiedSWITCHING300MHz250ns70ns------
-
19 Weeks-Surface MountSurface MountSOT-563, SOT-6666-3.005049mg-55°C~150°C TJTape & Reel (TR)2005Active1 (Unlimited)6SMD/SMT---40V150mW-200mA250MHzMMDT3906VC2PNPDual150mW--250MHz2 PNP (Dual)-40V200mA100 @ 10mA 1V-400mV @ 5mA, 50mA40V----400mV40V-40V5V60-600μm1.6mm1.2mmNo SVHCNoROHS3 CompliantLead FreeSILICONe3EAR99Matte Tin (Sn)Other TransistorsFLAT260-406-SWITCHING250MHz300ns70nsyes-----
-
12 Weeks--Surface Mount6-TSSOP, SC-88, SOT-363----55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)6-------MMDT44032----200mW-2 PNP (Dual)---100 @ 150mA 2V100nA ICBO750mV @ 50mA, 500mA-40V600mA---200MHz---------ROHS3 Compliant-SILICONe3EAR99Matte Tin (Sn)Other TransistorsGULL WING260-106Not QualifiedSWITCHING200MHz255ns35nsyesYESR-PDSO-G6SEPARATE, 2 ELEMENTSPNP0.2W
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