Diodes Incorporated MMDT2222A-7-F
- Part Number:
- MMDT2222A-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2460635-MMDT2222A-7-F
- Description:
- TRANS 2NPN 40V 0.6A SOT363
- Datasheet:
- MMDT2222A-7-F
Diodes Incorporated MMDT2222A-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT2222A-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMDT2222A
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation200mW
- Gain Bandwidth Product300MHz
- Transistor Type2 NPN (Dual)
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Continuous Collector Current600mA
- Turn On Time-Max (ton)35ns
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMDT2222A-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT2222A-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT2222A-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT2222A-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT2222A-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMDT2222A-7-F More Descriptions
Transistor General Purpose BJT NPN 40 Volt 0.6 Amp 6-Pin SOT-363 Tape And Reel
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 200mW 6-Pin SOT-363 T/R / TRANS 2NPN 40V 0.6A SOT363
MMDT2222A Series Dual NPN 40 V 200 mW Small Signal Transistor SMT - SOT-363
General Purpose Transistor Sot363 T&r 3K Rohs Compliant: Yes |Diodes Inc. MMDT2222A-7-F
Dual NPN Small Signal Transistor SOT-363 | Diodes Inc MMDT2222A-7-F
BIPOLAR TRANSISTOR DUAL NPN SOT-363 ROHS 3K
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 200mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 200mW 6-Pin SOT-363 T/R / TRANS 2NPN 40V 0.6A SOT363
MMDT2222A Series Dual NPN 40 V 200 mW Small Signal Transistor SMT - SOT-363
General Purpose Transistor Sot363 T&r 3K Rohs Compliant: Yes |Diodes Inc. MMDT2222A-7-F
Dual NPN Small Signal Transistor SOT-363 | Diodes Inc MMDT2222A-7-F
BIPOLAR TRANSISTOR DUAL NPN SOT-363 ROHS 3K
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 200mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
The three parts on the right have similar specifications to MMDT2222A-7-F.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeQualification StatusTransistor ApplicationTurn Off Time-Max (toff)View Compare
-
MMDT2222A-7-F19 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3yesActive1 (Unlimited)6SMD/SMTEAR99Matte Tin (Sn)Other Transistors40V200mWGULL WING260600mA300MHz40MMDT2222A62NPNDual200mW300MHz2 NPN (Dual)40V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz1V40V75V6V100600mA35ns1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free-----
-
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2003e0-Obsolete1 (Unlimited)6-EAR99Tin/Lead (Sn85Pb15)Other Transistors40V200mWGULL WING235200mA-10MMDT390462NPNDual-300MHz2 NPN (Dual)300mV200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V300MHz-40V60V6V100200mA70ns1mm2.2mm1.35mmNo SVHC-Non-RoHS CompliantContains Leadnot_compliantNot QualifiedSWITCHING250ns
-
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2003e0-Obsolete1 (Unlimited)6-EAR99Tin/Lead (Sn85Pb15)-40V200mWGULL WING235600mA-10MMDT2222A62NPNDual-300MHz2 NPN (Dual)1V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz-40V75V6V100600mA35ns1mm2.2mm1.35mmNo SVHC-Non-RoHS CompliantContains Leadnot_compliantNot Qualified-285ns
-
19 WeeksSurface MountSurface MountSOT-563, SOT-66663.005049mgSILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6SMD/SMTEAR99Matte Tin (Sn)Other Transistors-40V150mWFLAT260-200mA250MHz40MMDT3906VC62PNPDual150mW250MHz2 PNP (Dual)40V200mA100 @ 10mA 1V-400mV @ 5mA, 50mA40V250MHz-400mV40V40V5V60-70ns600μm1.6mm1.2mmNo SVHCNoROHS3 CompliantLead Free--SWITCHING300ns
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 December 2023
LM358DR Dual Operational Amplifier Characteristics, Applications, LM358DR vs LM358S
Ⅰ. LM358DR descriptionⅡ. Pin configuration of LM358DRⅢ. What are the characteristics of LM358DR?Ⅳ. How to adjust the gain setting of the LM358DR chip?Ⅴ. Schematic diagram of LM358DRⅥ. What... -
26 December 2023
An Overview of BAV99 Switching Diode
Ⅰ. What is a switching diode?Ⅱ. Introduction of BAV99Ⅲ. What are the functions of BAV99 diode?Ⅳ. Typical characteristics of BAV99 diodeⅤ. Technical parameters of BAV99 diodeⅥ. How to... -
27 December 2023
Everything You Need to Know About STM8S003F3P6TR Microcontroller
Ⅰ. Overview of STM8S003F3P6TRⅡ. Structure of STM8S003F3P6TR microcontrollerⅢ. Package of STM8S003F3P6TR microcontrollerⅣ. STM8S003F3P6TR priceⅤ. Advantages and application scenarios of STM8S003F3P6TRⅥ. STM8S003F3P6TR specificationsⅦ. What are the characteristics of STM8S003F3P6TR... -
27 December 2023
Applications and Usage of IR2011STRPBF Isolated Gate Driver
Ⅰ. What is a gate driver?Ⅱ. Introduction to IR2011STRPBFⅢ. Dimensions and package of IR2011STRPBFⅣ. Technical parameters of IR2011STRPBFⅤ. Who produces the IR2011STRPBF?Ⅵ. Absolute maximum ratings of IR2011STRPBFⅦ. Where...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.