MMBFJ309LT1G

ON Semiconductor MMBFJ309LT1G

Part Number:
MMBFJ309LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2474995-MMBFJ309LT1G
Description:
JFET N-CH 25V 30MA SOT23
ECAD Model:
Datasheet:
MMBFJ309LT1G

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Specifications
ON Semiconductor MMBFJ309LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBFJ309LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    1.437803g
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -25V
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    30mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBFJ309
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    DEPLETION MODE
  • Power Dissipation
    225mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Breakdown Voltage
    -25V
  • Drain to Source Voltage (Vdss)
    25V
  • Transistor Type
    N-Channel JFET
  • Continuous Drain Current (ID)
    10mA
  • Gate to Source Voltage (Vgs)
    25V
  • Input Capacitance
    5pF
  • FET Technology
    JUNCTION
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Height
    1.016mm
  • Length
    3.0226mm
  • Width
    1.397mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBFJ309LT1G Description   MMBFJ309LT1G amplifier provides low offset and long-term stability using a low-noise and chopperless amplifier circuit. MMBFJ309LT1G op amp are powered by one power supply that operates over a variety of voltages. MMBFJ309LT1G circuit operation of a split power supply is also possible, and the current drain of the power supply is not dependent on the strength of the voltage at which power supplies are supplied.     MMBFJ309LT1G Features   Low Noise Wide Input-Voltage Range No External Components Required Replace Chopper Amplifiers at a Lower Cost Wide Supply-Voltage Range     MMBFJ309LT1G Applications   Switch high current loads Speed control of Motors High amplification Power switches Inverter and rectifier circuits
MMBFJ309LT1G More Descriptions
Transistor; JFET - VHF/UHF Amplifier; 25 VDC; 10 mADC; SOT-23 (TO-236); Pb-Free
ON SEMICONDUCTOR - MMBFJ309LT1G - JFET Transistor, JFET, -25 V, 12 mA, 30 mA, -4 V, SOT-23, JFET
SS SOT23 JFET NCH 25V TR; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss Min:12mA; Zero Gate Voltage Drain Current Idss Max:30mA; Gate-Source Cutoff Voltage Vgs(off) Max:-4V; Transistor Case Style:SOT-23; TransistorRoHS Compliant: Yes
Channel Type = N-Channel / Configuration = Single / Drain-Source Voltage (Vds) V = 25 / Breakdown Voltage V = -25 / Power Dissipation (Pd) mW = 225 / Gate-Source Cutoff Voltage Max. (Vgs(off)) V = -4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260
TRANSISTOR, JFET, N, 25V, SOT-23; Breakdown Voltage Vbr: -25V; Zero Gate Voltage Drain Current Idss Min: 12mA; Zero Gate Voltage Drain Current Idss Max: 30mA; Gate-Source Cutoff Voltage Vgs(off) Max: -4V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Capacitance Ciss Max: 5pF; Current Idss Max: 30mA; Current Idss Min: 12mA; Drain Source Voltage Vds: 25V; No. of Pins: 3Pins; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 225mW; Power Dissipation Ptot Max: 225mW; SMD Marking: 6x; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Voltage Vgs Off Min: -1V; Zero Gate Voltage Drain Current Idss: 12mA to 30mA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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