Fairchild/ON Semiconductor MMBFJ309
- Part Number:
- MMBFJ309
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2475006-MMBFJ309
- Description:
- JFET N-CH 25V 30MA SOT23
- Datasheet:
- MMBFJ309
Fairchild/ON Semiconductor MMBFJ309 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBFJ309.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 14 hours ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating30mA
- Frequency450MHz
- Base Part NumberMMBFJ309
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation350mW
- Current - Test10mA
- Transistor ApplicationAMPLIFIER
- Breakdown Voltage25V
- Drain to Source Voltage (Vdss)25V
- Transistor TypeN-Channel JFET
- Continuous Drain Current (ID)30mA
- Gate to Source Voltage (Vgs)-25V
- Gain12dB
- FET TechnologyJUNCTION
- Noise Figure3dB
- Voltage - Test10V
- Feedback Cap-Max (Crss)2.5 pF
- Height930μm
- Length2.92mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBFJ309 Description
This device is intended for use as a VHF/UHF oscillator, mixer, and amplifier. 16 dB at 100 MHz and 12 dB at 450 MHz can be achieved as a common gate amplifier. from process 92, the source. Both the source and the drain are movable. This product can be applied in a variety of circumstances and is meant for general use.
MMBFJ309 Features
The highest junction temperature used for these ratings is 150°C.
These constraints apply in a steady condition. When using pulsed or low-duty-cycle operations, applications should be discussed with Fairchild Semiconductor.
MMBFJ309 Applications
Switching applications
This device is intended for use as a VHF/UHF oscillator, mixer, and amplifier. 16 dB at 100 MHz and 12 dB at 450 MHz can be achieved as a common gate amplifier. from process 92, the source. Both the source and the drain are movable. This product can be applied in a variety of circumstances and is meant for general use.
MMBFJ309 Features
The highest junction temperature used for these ratings is 150°C.
These constraints apply in a steady condition. When using pulsed or low-duty-cycle operations, applications should be discussed with Fairchild Semiconductor.
MMBFJ309 Applications
Switching applications
MMBFJ309 More Descriptions
MMBFJ309 Series N-Channel 25 V 30 mA Surface Mount RF Amplifier - SOT-23-3
FAIRCHILD SEMICONDUCTOR MMBFJ309 N CHANNEL JFET, -25V, SOT-23
Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:25V; Zero Gate Voltage Drain Current Min, Idss:12A; Zero Gate Voltage Drain Current Max, Idss:30mA
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
FAIRCHILD SEMICONDUCTOR MMBFJ309 N CHANNEL JFET, -25V, SOT-23
Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:25V; Zero Gate Voltage Drain Current Min, Idss:12A; Zero Gate Voltage Drain Current Max, Idss:30mA
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
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