MMBFJ309

Fairchild/ON Semiconductor MMBFJ309

Part Number:
MMBFJ309
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2475006-MMBFJ309
Description:
JFET N-CH 25V 30MA SOT23
ECAD Model:
Datasheet:
MMBFJ309

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Specifications
Fairchild/ON Semiconductor MMBFJ309 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBFJ309.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 14 hours ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    25V
  • Max Power Dissipation
    350mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    30mA
  • Frequency
    450MHz
  • Base Part Number
    MMBFJ309
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    DEPLETION MODE
  • Power Dissipation
    350mW
  • Current - Test
    10mA
  • Transistor Application
    AMPLIFIER
  • Breakdown Voltage
    25V
  • Drain to Source Voltage (Vdss)
    25V
  • Transistor Type
    N-Channel JFET
  • Continuous Drain Current (ID)
    30mA
  • Gate to Source Voltage (Vgs)
    -25V
  • Gain
    12dB
  • FET Technology
    JUNCTION
  • Noise Figure
    3dB
  • Voltage - Test
    10V
  • Feedback Cap-Max (Crss)
    2.5 pF
  • Height
    930μm
  • Length
    2.92mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBFJ309 Description
This device is intended for use as a VHF/UHF oscillator, mixer, and amplifier. 16 dB at 100 MHz and 12 dB at 450 MHz can be achieved as a common gate amplifier. from process 92, the source. Both the source and the drain are movable. This product can be applied in a variety of circumstances and is meant for general use.

MMBFJ309 Features
The highest junction temperature used for these ratings is 150°C.
These constraints apply in a steady condition. When using pulsed or low-duty-cycle operations, applications should be discussed with Fairchild Semiconductor.

MMBFJ309 Applications
Switching applications
MMBFJ309 More Descriptions
MMBFJ309 Series N-Channel 25 V 30 mA Surface Mount RF Amplifier - SOT-23-3
FAIRCHILD SEMICONDUCTOR MMBFJ309 N CHANNEL JFET, -25V, SOT-23
Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:25V; Zero Gate Voltage Drain Current Min, Idss:12A; Zero Gate Voltage Drain Current Max, Idss:30mA
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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