Fairchild/ON Semiconductor MMBF4416A
- Part Number:
- MMBF4416A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069846-MMBF4416A
- Description:
- JFET N-CH 35V 15MA SOT23
- Datasheet:
- MMBF4416A
Fairchild/ON Semiconductor MMBF4416A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBF4416A.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC35V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating10mA
- Frequency400MHz
- Base Part NumberMMBF4416A
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation225mW
- Current - Test5mA
- Transistor ApplicationAMPLIFIER
- Breakdown Voltage-35V
- Transistor TypeN-Channel JFET
- Continuous Drain Current (ID)15mA
- Gate to Source Voltage (Vgs)-35V
- FET TechnologyJUNCTION
- Noise Figure4dB
- Voltage - Test15V
- Feedback Cap-Max (Crss)0.8 pF
- Height1.04mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBF4416A Description
RF power transistors that operate between 1200 MHz and 1400 MHz and have duty cycles between 1% and 12%. For pulsed applications, these devices perform well. This innovation makes an effort to boost avalanche energy, dv/dt rate, conduction loss, and switching performance. This product is intended for general use and can be used in a range of situations.
MMBF4416A Features
This gadget was created for RD amplifiers.
from process number 50
MMBF4416A Applications
Switching applications
RF power transistors that operate between 1200 MHz and 1400 MHz and have duty cycles between 1% and 12%. For pulsed applications, these devices perform well. This innovation makes an effort to boost avalanche energy, dv/dt rate, conduction loss, and switching performance. This product is intended for general use and can be used in a range of situations.
MMBF4416A Features
This gadget was created for RD amplifiers.
from process number 50
MMBF4416A Applications
Switching applications
MMBF4416A More Descriptions
35V 225mW 0.8pF@15V N Channel 4pF@15V -55¡Í~ 150¡Í@(Tj) SOT-23-3L MOSFETs ROHS
Transistor; Transistor Type:RF Bipolar; Package/Case:SOT-23; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:10mA; Mounting Type:Surface Mount; Voltage Rating:35V ;RoHS Compliant: Yes
JFET, N CHANNEL, -35V, SOT-23-3; Breakdown Voltage Vbr: -35V; Zero Gate Voltage Drain Current Idss Min: 5mA; Zero Gate Voltage Drain Current Idss Max: 15mA; Gate-Source Cutoff Voltage Vgs(off) Max: -6V; Transistor Case Style: SOT-23; Transistor Type: RF FET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins; Power Dissipation Pd: 225mW
Transistor; Transistor Type:RF Bipolar; Package/Case:SOT-23; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:10mA; Mounting Type:Surface Mount; Voltage Rating:35V ;RoHS Compliant: Yes
JFET, N CHANNEL, -35V, SOT-23-3; Breakdown Voltage Vbr: -35V; Zero Gate Voltage Drain Current Idss Min: 5mA; Zero Gate Voltage Drain Current Idss Max: 15mA; Gate-Source Cutoff Voltage Vgs(off) Max: -6V; Transistor Case Style: SOT-23; Transistor Type: RF FET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins; Power Dissipation Pd: 225mW
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