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MJE243G

ON Semiconductor MJE243G

Part Number:
MJE243G
Manufacturer:
ON Semiconductor
Ventron No:
2463250-MJE243G
Description:
TRANS NPN 100V 4A TO225AA
ECAD Model:
Datasheet:
MJE243G

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Specifications
ON Semiconductor MJE243G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE243G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    100V
  • Max Power Dissipation
    15W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    4A
  • Frequency
    40MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.5W
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    40MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 200mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    40MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    40
  • Height
    11.0998mm
  • Length
    7.7978mm
  • Width
    2.9972mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE243G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 4A volts.

MJE243G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz


MJE243G Applications
There are a lot of ON Semiconductor
MJE243G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE243G More Descriptions
4.0 A, 100 V NPN Bipolar Power Transistor
Bipolar (Bjt) Single Transistor, Audio, Npn, 100 V, 40 Mhz, 15 W, 4 A, 40 Rohs Compliant: Yes |Onsemi MJE243G
100V 1.5W 40@200mA,1V 4A NPN TO-225 Bipolar Transistors - BJT ROHS
Bipolar Transistor NPN 100V 4A 40MHz 1.5W Through Hole TO-126
Trans GP BJT NPN 100V 4A 15000mW 3-Pin(3 Tab) TO-225 Box
MJE Series 100 V 5 A NPN Complementary Silicon Power Plastic Transistor - TO-225
MJE243G ON SemiconductorTransistor, Bipolar,Si,NPN 4A 100V TO225AA RoHS
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 100VDC, IC 4A, PD 15W, TO-225,VCBO 100VDC | ON Semiconductor MJE243G
Transistor, NPN, 100V, 4A, TO-225,; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power
TRANSISTOR, NPN, 100V, 4A, TO-225,; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 40MHz; Power Dissipation Pd: 15W; DC Collector Current: 4A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-225; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Complementary Device: MJE253; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1A; Gain Bandwidth ft Min: 40MHz; Gain Bandwidth ft Typ: 40MHz; Hfe Min: 15; Operating Temperature Min: -65°C; Power Dissipation Ptot Max: 15W; Termination Type: Through Hole; Voltage Vcbo: 100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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