STMicroelectronics MJE2955T
- Part Number:
- MJE2955T
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465779-MJE2955T
- Description:
- TRANS PNP 60V 10A TO-220
- Datasheet:
- MJE2955T
STMicroelectronics MJE2955T technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJE2955T.
- Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-60V
- Max Power Dissipation75W
- Current Rating-10A
- Base Part NumberMJE2955
- PolarityPNP
- Element ConfigurationSingle
- Power - Max75W
- Gain Bandwidth Product2MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)8V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage400V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)10A
- Max Frequency2MHz
- Collector Emitter Saturation Voltage1.1V
- Max Breakdown Voltage60V
- Frequency - Transition2MHz
- Collector Base Voltage (VCBO)70V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height9.28mm
- Length10.28mm
- Width4.82mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJE2955T Description
The MJE2955T is a 10A PNP bipolar Power Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
MJE2955T Features
DC Current Gain Specified to 10 Amperes
High Current Gain - Bandwidth Product -
-fT = 2.0 MHz (Min) @ IC -fT = 500 mAdc Pb-Free Packages are Available
MJE2955T Applications
Industrial
Power Management
The MJE2955T is a 10A PNP bipolar Power Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
MJE2955T Features
DC Current Gain Specified to 10 Amperes
High Current Gain - Bandwidth Product -
-fT = 2.0 MHz (Min) @ IC -fT = 500 mAdc Pb-Free Packages are Available
MJE2955T Applications
Industrial
Power Management
MJE2955T More Descriptions
Trans GP BJT PNP 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE2955T Series PNP 60 V 10 A Complementary Silicon Power Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Switch
Power Bipolar, PNP, 4V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style
MJE2955T Series PNP 60 V 10 A Complementary Silicon Power Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Switch
Power Bipolar, PNP, 4V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style
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