MJE2955T

STMicroelectronics MJE2955T

Part Number:
MJE2955T
Manufacturer:
STMicroelectronics
Ventron No:
2465779-MJE2955T
Description:
TRANS PNP 60V 10A TO-220
ECAD Model:
Datasheet:
MJE2955T

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Specifications
STMicroelectronics MJE2955T technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJE2955T.
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 week ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    75W
  • Current Rating
    -10A
  • Base Part Number
    MJE2955
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power - Max
    75W
  • Gain Bandwidth Product
    2MHz
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    8V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 4V
  • Current - Collector Cutoff (Max)
    700μA
  • Vce Saturation (Max) @ Ib, Ic
    8V @ 3.3A, 10A
  • Collector Emitter Breakdown Voltage
    400V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    10A
  • Max Frequency
    2MHz
  • Collector Emitter Saturation Voltage
    1.1V
  • Max Breakdown Voltage
    60V
  • Frequency - Transition
    2MHz
  • Collector Base Voltage (VCBO)
    70V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    20
  • Height
    9.28mm
  • Length
    10.28mm
  • Width
    4.82mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJE2955T Description
The MJE2955T is a 10A PNP bipolar Power Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.

MJE2955T Features
DC Current Gain Specified to 10 Amperes
High Current Gain - Bandwidth Product -
-fT = 2.0 MHz (Min) @ IC -fT = 500 mAdc Pb-Free Packages are Available


MJE2955T Applications
Industrial
Power Management
MJE2955T More Descriptions
Trans GP BJT PNP 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE2955T Series PNP 60 V 10 A Complementary Silicon Power Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Switch
Power Bipolar, PNP, 4V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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