ON Semiconductor MCH6101-TL-E
- Part Number:
- MCH6101-TL-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585241-MCH6101-TL-E
- Description:
- TRANS PNP 15V 1.5A MCPH6
- Datasheet:
- MCH6101-TL-E
ON Semiconductor MCH6101-TL-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MCH6101-TL-E.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case6-SMD, Flat Leads
- Number of Pins6
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation1W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count6
- Element ConfigurationSingle
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-180mV
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic180mV @ 15mA, 750mA
- Collector Emitter Breakdown Voltage15V
- Max Frequency1MHz
- Collector Emitter Saturation Voltage-180mV
- Max Breakdown Voltage15V
- Frequency - Transition430MHz
- Collector Base Voltage (VCBO)-15V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- Height830μm
- Length2mm
- Width1.6mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MCH6101-TL-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 15mA, 750mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
MCH6101-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 180mV @ 15mA, 750mA
the emitter base voltage is kept at 5V
MCH6101-TL-E Applications
There are a lot of ON Semiconductor
MCH6101-TL-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 15mA, 750mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
MCH6101-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 180mV @ 15mA, 750mA
the emitter base voltage is kept at 5V
MCH6101-TL-E Applications
There are a lot of ON Semiconductor
MCH6101-TL-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MCH6101-TL-E More Descriptions
Bipolar Transistor, -15V, -1.5A, Low VCE(sat), PNP Single MCPH6
ON Semi MCH6101-TL-E PNP Bipolar Transistor, 1.5 A, 15 V, 6-Pin MCPH | ON Semiconductor MCH6101-TL-E
Trans GP BJT PNP 15V 1.5A 1000mW 6-Pin MCPH T/R
Bipolar Transistors - BJT BIP PNP 1.5A 15V
TRANSISTOR, PNP, 15V, 1.5A, SC-82; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-15V; Typ Gain Bandwidth ft:430MHz; Power Dissipation Pd:1W; DC Collector Current:-1.5A; DC Current Gain hFE:560; Transistor Case Style:SC-82; No. of Pins:6
ON Semi MCH6101-TL-E PNP Bipolar Transistor, 1.5 A, 15 V, 6-Pin MCPH | ON Semiconductor MCH6101-TL-E
Trans GP BJT PNP 15V 1.5A 1000mW 6-Pin MCPH T/R
Bipolar Transistors - BJT BIP PNP 1.5A 15V
TRANSISTOR, PNP, 15V, 1.5A, SC-82; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-15V; Typ Gain Bandwidth ft:430MHz; Power Dissipation Pd:1W; DC Collector Current:-1.5A; DC Current Gain hFE:560; Transistor Case Style:SC-82; No. of Pins:6
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