MCH6101-TL-E

ON Semiconductor MCH6101-TL-E

Part Number:
MCH6101-TL-E
Manufacturer:
ON Semiconductor
Ventron No:
3585241-MCH6101-TL-E
Description:
TRANS PNP 15V 1.5A MCPH6
ECAD Model:
Datasheet:
MCH6101-TL-E

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Specifications
ON Semiconductor MCH6101-TL-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MCH6101-TL-E.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-SMD, Flat Leads
  • Number of Pins
    6
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e6
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Bismuth (Sn/Bi)
  • Max Power Dissipation
    1W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    6
  • Element Configuration
    Single
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    -180mV
  • Max Collector Current
    1.5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 100mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    180mV @ 15mA, 750mA
  • Collector Emitter Breakdown Voltage
    15V
  • Max Frequency
    1MHz
  • Collector Emitter Saturation Voltage
    -180mV
  • Max Breakdown Voltage
    15V
  • Frequency - Transition
    430MHz
  • Collector Base Voltage (VCBO)
    -15V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    200
  • Height
    830μm
  • Length
    2mm
  • Width
    1.6mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MCH6101-TL-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 15mA, 750mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

MCH6101-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 180mV @ 15mA, 750mA
the emitter base voltage is kept at 5V


MCH6101-TL-E Applications
There are a lot of ON Semiconductor
MCH6101-TL-E applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MCH6101-TL-E More Descriptions
Bipolar Transistor, -15V, -1.5A, Low VCE(sat), PNP Single MCPH6
ON Semi MCH6101-TL-E PNP Bipolar Transistor, 1.5 A, 15 V, 6-Pin MCPH | ON Semiconductor MCH6101-TL-E
Trans GP BJT PNP 15V 1.5A 1000mW 6-Pin MCPH T/R
Bipolar Transistors - BJT BIP PNP 1.5A 15V
TRANSISTOR, PNP, 15V, 1.5A, SC-82; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-15V; Typ Gain Bandwidth ft:430MHz; Power Dissipation Pd:1W; DC Collector Current:-1.5A; DC Current Gain hFE:560; Transistor Case Style:SC-82; No. of Pins:6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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