ON Semiconductor MBT3946DW1T1G

Name: MBT3946DW1T1G
Brand: ON Semiconductor
SKU: 3068134-MBT3946DW1T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBT3946DW1T1G

Manufacturer:: ON Semiconductor

Ventron No:: 3068134-MBT3946DW1T1G

Description:: TRANS NPN/PNP 40V 0.2A SC88

ECAD Model:

Datasheet:: MBT3946DW1T1G

Specifications

ON Semiconductor MBT3946DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBT3946DW1T1G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
40V
Max Power Dissipation
150mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBT3946D
Pin Count
6
Number of Elements
2
Polarity
NPN, PNP
Element Configuration
Dual
Power Dissipation
150mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Transistor Type
NPN, PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Frequency - Transition
300MHz 250MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Turn On Time-Max (ton)
70ns
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MBT3946DW1T1G Description
The MBT3946DW1T1G device is a derivative of our popular SOT-23/SOT-323 three-lead device. It is designed for general-purpose amplifier applications and is installed in the SOT-363-6 surface mount package. By placing two discrete devices in one package, the device is very suitable for low-power surface mount applications with limited circuit board space. MBT3946DW1T1G Features
? hFE, 100?300 ? Low VCE(sat), ≤ 0.4 V ? Simplifies Circuit Design ? Reduces Board Space ? Reduces Component Count ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MBT3946DW1T1G Applications
low-power surface mount applications with limited circuit board space.

MBT3946DW1T1G More Descriptions

Trans GP BJT NPN/PNP 40V 0.2A 150mW Automotive 6-Pin SC-88 T/R
MBT Series 40 V 200 mA NPN/PNP Silicon Dual General Purpose Transistor - SOT-363
BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88, FULL REEL
ON Semi MBT3946DW1T1G Dual NPN PNP RF Bipolar Transistor,0.2 A,40V,6-Pin SC-88 | ON Semiconductor MBT3946DW1T1G
null 150mW 100@10mA,1V 200mA 1PCSNPN&1PCSPNP SOT-363-6(SC-70-6) Bipolar Transistors - BJT ROHS
Bipolar Transistor, Npn/Pnp Dual 40V Sc-88, Full Reel; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max Npn:40V; Collector Emitter Voltage Max Pnp:40V; Continuous Collector Current Npn:200Ma; Power Dissipation Npn:150Mw Rohs Compliant: Yes |Onsemi MBT3946DW1T1G.
The MBT3946DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package this device is ideal for low-power surface mount applications where board space is at a premium.

Product Comparison

The three parts on the right have similar specifications to MBT3946DW1T1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

JESD-30 Code

Qualification Status

Configuration

Power - Max

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Turn Off Time-Max (toff)

View Compare
MBT3946DW1T1G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

8 Weeks

Tin

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2004

e3

yes

Active

1 (Unlimited)

6

EAR99

BIP General Purpose Small Signal

40V

150mW

GULL WING

260

200mA

300MHz

40

MBT3946D

6

2

NPN, PNP

Dual

150mW

AMPLIFIER

300MHz

NPN, PNP

40V

200mA

100 @ 10mA 1V

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

40V

300MHz

300mV

40V

300MHz 250MHz

60V

5V

40

70ns

1mm

2.2mm

1.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
MBT3904DW1T1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2007

e3

yes

Active

1 (Unlimited)

6

EAR99

Other Transistors

40V

150mW

GULL WING

260

200mA

300MHz

40

MBT3904D

6

2

NPN

Dual

150mW

AMPLIFIER

300MHz

2 NPN (Dual)

40V

200mA

100 @ 10mA 1V

300mV @ 5mA, 50mA

40V

300MHz

300mV

40V

-

60V

6V

40

70ns

990.6μm

2.1844mm

1.3462mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

MBT3946DW1T1G vs MBT3904DW1T1G
MBT3946DW1T2G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2004

e3

yes

Active

1 (Unlimited)

6

EAR99

BIP General Purpose Small Signal

40V

150mW

GULL WING

260

200mA

300MHz

40

MBT3946D

6

2

NPN, PNP

Dual

150mW

AMPLIFIER

300MHz

NPN, PNP

40V

200mA

100 @ 10mA 1V

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

40V

300MHz

300mV

40V

300MHz 250MHz

60V

5V

40

70ns

1mm

2.2mm

1.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

MBT3946DW1T1G vs MBT3946DW1T2G
MBT3904DW2T1

ON Semiconductor

-

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

no

Obsolete

1 (Unlimited)

6

-

-

-

-

GULL WING

240

-

-

30

-

6

2

-

-

-

AMPLIFIER

-

2 NPN (Dual)

-

-

100 @ 10mA 1V

300mV @ 5mA, 50mA

-

300MHz

-

-

300MHz

-

-

-

70ns

-

-

-

-

-

Non-RoHS Compliant

-

TIN LEAD

R-PDSO-G6

COMMERCIAL

SEPARATE, 2 ELEMENTS

150mW

NPN

40V

200mA

250ns

MBT3946DW1T1G vs MBT3904DW2T1