MBT3904DW1T1G

ON Semiconductor MBT3904DW1T1G

Part Number:
MBT3904DW1T1G
Manufacturer:
ON Semiconductor
Ventron No:
3068124-MBT3904DW1T1G
Description:
TRANS 2NPN 40V 0.2A SC88
ECAD Model:
Datasheet:
MBT3904DW1T1G

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Specifications
ON Semiconductor MBT3904DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBT3904DW1T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    40V
  • Max Power Dissipation
    150mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    200mA
  • Frequency
    300MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBT3904D
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    300MHz
  • Transistor Type
    2 NPN (Dual)
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA 1V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    40
  • Turn On Time-Max (ton)
    70ns
  • Height
    990.6μm
  • Length
    2.1844mm
  • Width
    1.3462mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MBT3904DW1T1G Description
MBT3904DW1T1G devices are derivatives of our popular SOT-23/SOT-323 3-lead devices. It is designed for general purpose amplifier applications and is installed in SOT-363Six-lead surface mount packages. By placing two discrete devices in one package, the device is ideal for low-power surface mount applications with limited circuit board space.
MBT3904DW1T1G  Features
? hFE, 100?300 ? Low VCE(sat), ≤ 0.4 V ? Simplifies Circuit Design ? Reduces Board Space ? Reduces Component Count ? Available in 8 mm, 7?inch/3,000 Unit Tape and Reel ? S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant   MBT3904DW1T1G  Applications
low-power surface mount applications
MBT3904DW1T1G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
MBT Series 40 V 200 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN 40V 0.2A 150000mW Automotive 6-Pin SOT-363 T/R
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 200mA,PD 150W,SOT-363 | ON Semiconductor MBT3904DW1T1G
Bipolar Transistors - BJT 200mA 60V Dual NPN
Transistor, Bipolar, Npn, Dual 40V, Sot363, Full Reel; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:200Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:300Hfe; No. Of Pins:6Pins Rohs Compliant: Yes
The MBT3904DW1T1 MBT3904DW2T1 and MBT3906DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package these devices are ideal for low-power surface mount applications where board space is at a premium.
Transistor Polarity = NPN / Configuration = Dual / Continuous Collector Current (Ic) mA = 200 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 30 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 950 / Reflow Temperature Max. °C = 260
Product Comparison
The three parts on the right have similar specifications to MBT3904DW1T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Turn On Time-Max (ton)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Frequency - Transition
    Terminal Finish
    Power - Max
    Halogen Free
    JESD-30 Code
    Qualification Status
    Configuration
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Turn Off Time-Max (toff)
    View Compare
  • MBT3904DW1T1G
    MBT3904DW1T1G
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Other Transistors
    40V
    150mW
    GULL WING
    260
    200mA
    300MHz
    40
    MBT3904D
    6
    2
    NPN
    Dual
    150mW
    AMPLIFIER
    300MHz
    2 NPN (Dual)
    40V
    200mA
    100 @ 10mA 1V
    300mV @ 5mA, 50mA
    40V
    300MHz
    300mV
    40V
    60V
    6V
    40
    70ns
    990.6μm
    2.1844mm
    1.3462mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBT3946DW1T2G
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Tin
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    BIP General Purpose Small Signal
    40V
    150mW
    GULL WING
    260
    200mA
    300MHz
    40
    MBT3946D
    6
    2
    NPN, PNP
    Dual
    150mW
    AMPLIFIER
    300MHz
    NPN, PNP
    40V
    200mA
    100 @ 10mA 1V
    300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
    40V
    300MHz
    300mV
    40V
    60V
    5V
    40
    70ns
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    300MHz 250MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBT3906DW1T2G
    LIFETIME (Last Updated: 5 days ago)
    10 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    -
    EAR99
    Other Transistors
    -
    150mW
    -
    -
    -
    -
    -
    -
    6
    -
    PNP
    -
    -
    -
    -
    2 PNP (Dual)
    400mV
    200mA
    100 @ 10mA 1V
    400mV @ 5mA, 50mA
    40V
    250MHz
    -
    -
    40V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    250MHz
    Tin (Sn)
    150mW
    Halogen Free
    -
    -
    -
    -
    -
    -
    -
  • MBT3904DW2T1
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e0
    no
    Obsolete
    1 (Unlimited)
    6
    -
    -
    -
    -
    GULL WING
    240
    -
    -
    30
    -
    6
    2
    -
    -
    -
    AMPLIFIER
    -
    2 NPN (Dual)
    -
    -
    100 @ 10mA 1V
    300mV @ 5mA, 50mA
    -
    300MHz
    -
    -
    -
    -
    -
    70ns
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    300MHz
    TIN LEAD
    150mW
    -
    R-PDSO-G6
    COMMERCIAL
    SEPARATE, 2 ELEMENTS
    NPN
    40V
    200mA
    250ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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