ON Semiconductor MBT3904DW1T1G
- Part Number:
- MBT3904DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068124-MBT3904DW1T1G
- Description:
- TRANS 2NPN 40V 0.2A SC88
- Datasheet:
- MBT3904DW1T1G
ON Semiconductor MBT3904DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBT3904DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation150mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMBT3904D
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Transistor Type2 NPN (Dual)
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- Turn On Time-Max (ton)70ns
- Height990.6μm
- Length2.1844mm
- Width1.3462mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MBT3904DW1T1G Description
MBT3904DW1T1G devices are derivatives of our popular SOT-23/SOT-323 3-lead devices. It is designed for general purpose amplifier applications and is installed in SOT-363Six-lead surface mount packages. By placing two discrete devices in one package, the device is ideal for low-power surface mount applications with limited circuit board space.
MBT3904DW1T1G Features
? hFE, 100?300 ? Low VCE(sat), ≤ 0.4 V ? Simplifies Circuit Design ? Reduces Board Space ? Reduces Component Count ? Available in 8 mm, 7?inch/3,000 Unit Tape and Reel ? S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant MBT3904DW1T1G Applications
low-power surface mount applications
MBT3904DW1T1G devices are derivatives of our popular SOT-23/SOT-323 3-lead devices. It is designed for general purpose amplifier applications and is installed in SOT-363Six-lead surface mount packages. By placing two discrete devices in one package, the device is ideal for low-power surface mount applications with limited circuit board space.
MBT3904DW1T1G Features
? hFE, 100?300 ? Low VCE(sat), ≤ 0.4 V ? Simplifies Circuit Design ? Reduces Board Space ? Reduces Component Count ? Available in 8 mm, 7?inch/3,000 Unit Tape and Reel ? S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant MBT3904DW1T1G Applications
low-power surface mount applications
MBT3904DW1T1G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
MBT Series 40 V 200 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN 40V 0.2A 150000mW Automotive 6-Pin SOT-363 T/R
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 200mA,PD 150W,SOT-363 | ON Semiconductor MBT3904DW1T1G
Bipolar Transistors - BJT 200mA 60V Dual NPN
Transistor, Bipolar, Npn, Dual 40V, Sot363, Full Reel; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:200Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:300Hfe; No. Of Pins:6Pins Rohs Compliant: Yes
The MBT3904DW1T1 MBT3904DW2T1 and MBT3906DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package these devices are ideal for low-power surface mount applications where board space is at a premium.
Transistor Polarity = NPN / Configuration = Dual / Continuous Collector Current (Ic) mA = 200 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 30 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 950 / Reflow Temperature Max. °C = 260
MBT Series 40 V 200 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN 40V 0.2A 150000mW Automotive 6-Pin SOT-363 T/R
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 200mA,PD 150W,SOT-363 | ON Semiconductor MBT3904DW1T1G
Bipolar Transistors - BJT 200mA 60V Dual NPN
Transistor, Bipolar, Npn, Dual 40V, Sot363, Full Reel; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:200Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:300Hfe; No. Of Pins:6Pins Rohs Compliant: Yes
The MBT3904DW1T1 MBT3904DW2T1 and MBT3906DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package these devices are ideal for low-power surface mount applications where board space is at a premium.
Transistor Polarity = NPN / Configuration = Dual / Continuous Collector Current (Ic) mA = 200 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 30 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 950 / Reflow Temperature Max. °C = 260
The three parts on the right have similar specifications to MBT3904DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFrequency - TransitionTerminal FinishPower - MaxHalogen FreeJESD-30 CodeQualification StatusConfigurationPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn Off Time-Max (toff)View Compare
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MBT3904DW1T1GACTIVE (Last Updated: 1 day ago)8 WeeksTinSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJCut Tape (CT)2007e3yesActive1 (Unlimited)6EAR99Other Transistors40V150mWGULL WING260200mA300MHz40MBT3904D62NPNDual150mWAMPLIFIER300MHz2 NPN (Dual)40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV40V60V6V4070ns990.6μm2.1844mm1.3462mmNo SVHCNoROHS3 CompliantLead Free------------
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ACTIVE (Last Updated: 2 days ago)8 WeeksTinSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)2004e3yesActive1 (Unlimited)6EAR99BIP General Purpose Small Signal40V150mWGULL WING260200mA300MHz40MBT3946D62NPN, PNPDual150mWAMPLIFIER300MHzNPN, PNP40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA40V300MHz300mV40V60V5V4070ns1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free300MHz 250MHz----------
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LIFETIME (Last Updated: 5 days ago)10 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363YES6--55°C~150°C TJTape & Reel (TR)2011e3yesObsolete1 (Unlimited)-EAR99Other Transistors-150mW------6-PNP----2 PNP (Dual)400mV200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V250MHz--40V-------NoROHS3 CompliantLead Free250MHzTin (Sn)150mWHalogen Free-------
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---Surface Mount6-TSSOP, SC-88, SOT-363YES-SILICON-55°C~150°C TJTape & Reel (TR)-e0noObsolete1 (Unlimited)6----GULL WING240--30-62---AMPLIFIER-2 NPN (Dual)--100 @ 10mA 1V300mV @ 5mA, 50mA-300MHz-----70ns-----Non-RoHS Compliant-300MHzTIN LEAD150mW-R-PDSO-G6COMMERCIALSEPARATE, 2 ELEMENTSNPN40V200mA250ns
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