MBRD640CTG

ON Semiconductor MBRD640CTG

Part Number:
MBRD640CTG
Manufacturer:
ON Semiconductor
Ventron No:
2821671-MBRD640CTG
Description:
DIODE ARRAY SCHOTTKY 40V 3A DPAK
ECAD Model:
Datasheet:
MBRD640CTG

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Specifications
ON Semiconductor MBRD640CTG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBRD640CTG.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    DPAK
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2012
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Voltage - Rated DC
    40V
  • Current Rating
    6A
  • Base Part Number
    MBRD640CT
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    100μA @ 40V
  • Voltage - Forward (Vf) (Max) @ If
    700mV @ 3A
  • Forward Current
    6A
  • Max Reverse Leakage Current
    100μA
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    75A
  • Voltage - DC Reverse (Vr) (Max)
    40V
  • Breakdown Voltage
    40V
  • Current - Average Rectified (Io)
    3A
  • Forward Voltage
    900mV
  • Max Reverse Voltage (DC)
    40V
  • Average Rectified Current
    3A
  • Peak Reverse Current
    100μA
  • Max Repetitive Reverse Voltage (Vrrm)
    40V
  • Peak Non-Repetitive Surge Current
    75A
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    75A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MBRD640CTG Overview
As long as the forward voltage is set to 900mV, the device will operate.A surge current should be monitored and should not exceed 75A.As long as the forward voltage is set to 6A, the device will operate.Parts can be powered by currents of 6A.There is a reverse voltage peak of 100μA on devices like this one.When reverse biased, its maximum reverse leakage current is 100μA, which is the current coming from that semiconductor device.

MBRD640CTG Features
900mV forward voltage
a peak voltage of 100μA
a reverse voltage peak of 100μA


MBRD640CTG Applications
There are a lot of ON Semiconductor
MBRD640CTG applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBRD640CTG More Descriptions
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 40V V(RRM), Silicon, TO-252AA
MBRD640CT Series 6 A 40 V Schottky Rectifier Diode - TO-252-3
Diode Schottky 40V 6A 3-Pin(2 Tab) DPAK Rail - Rail/Tube
Schottky Barrier Rectifier, 40 V, 6.0 A
Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(Av):6A; Diode Configuration:common Cathode; Diode Case Style:to-252 (Dpak); No. Of Pins:3Pins; Forward Voltage Vf Max:900Mv; Forward Surge Current Ifsm Max:75A Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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