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VBT3080C-E3/8W

Vishay Semiconductor Diodes Division VBT3080C-E3/8W

Part Number:
VBT3080C-E3/8W
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
4538828-VBT3080C-E3/8W
Description:
DIODE SCHOTTKY 30A 80V TO-263AB
ECAD Model:
Datasheet:
VBT3080C-E3/8W

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Specifications
Vishay Semiconductor Diodes Division VBT3080C-E3/8W technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VBT3080C-E3/8W.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Series
    TMBS®
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    FREE WHEELING DIODE, LOW POWER LOSS
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    700μA @ 80V
  • Voltage - Forward (Vf) (Max) @ If
    820mV @ 15A
  • Forward Current
    30A
  • Max Reverse Leakage Current
    30μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    150A
  • Application
    EFFICIENCY
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current
    15A
  • Number of Phases
    1
  • Peak Reverse Current
    700μA
  • Max Repetitive Reverse Voltage (Vrrm)
    80V
  • Peak Non-Repetitive Surge Current
    150A
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    ROHS3 Compliant
Description
VBT3080C-E3/8W Overview
A surge current should be monitored and should not exceed 150A.As long as the forward voltage is set to 30A, the device will operate.There is a reverse voltage peak of 700μA on devices like this one.When reverse biased, its maximum reverse leakage current is 30μA, which is the current coming from that semiconductor device.

VBT3080C-E3/8W Features
a peak voltage of 700μA
a reverse voltage peak of 700μA


VBT3080C-E3/8W Applications
There are a lot of Vishay Semiconductor Diodes Division
VBT3080C-E3/8W applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
VBT3080C-E3/8W More Descriptions
Diode Schottky 80V 30A 3-Pin(2 Tab) TO-263AB T/R
30A,80V,TRENCH SKY RECT.
DIODE ARR SCHOTT 80V 15A TO263AB
30A 80V SKY TO263AB
Product Comparison
The three parts on the right have similar specifications to VBT3080C-E3/8W.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Diode Configuration
    RoHS Status
    Published
    Operating Temperature (Max)
    Non-rep Pk Forward Current-Max
    Reverse Current-Max
    View Compare
  • VBT3080C-E3/8W
    VBT3080C-E3/8W
    Vishay Semiconductor Diodes Division
    14 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    Tape & Reel (TR)
    TMBS®
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -55°C
    FREE WHEELING DIODE, LOW POWER LOSS
    8541.10.00.80
    Rectifier Diodes
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    700μA @ 80V
    820mV @ 15A
    30A
    30μA
    -55°C~150°C
    150A
    EFFICIENCY
    80V
    15A
    1
    700μA
    80V
    150A
    1 Pair Common Cathode
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • VBT30L60C-E3/8W
    VBT30L60C-E3/8W
    Vishay Semiconductor Diodes Division
    22 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    Tape & Reel (TR)
    TMBS®
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -40°C
    FREE WHEELING DIODE, LOW POWER LOSS
    8541.10.00.80
    Rectifier Diodes
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    4mA @ 60V
    600mV @ 15A
    30A
    -
    -40°C~150°C
    -
    EFFICIENCY
    60V
    15A
    1
    4mA
    60V
    200A
    1 Pair Common Cathode
    ROHS3 Compliant
    2016
    -
    -
    -
    VBT3080C-E3/8W vs VBT30L60C-E3/8W
  • VBT3060C-E3/4W
    VBT3060C-E3/4W
    Vishay Semiconductor Diodes Division
    22 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    Tube
    TMBS®
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    -
    -
    FREE WHEELING DIODE, LOW POWER LOSS
    8541.10.00.80
    Rectifier Diodes
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1.2mA @ 60V
    700mV @ 15A
    -
    -
    -40°C~150°C
    -
    EFFICIENCY
    60V
    15A
    1
    -
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    2017
    150°C
    170A
    -
    VBT3080C-E3/8W vs VBT3060C-E3/4W
  • VBT3080C-M3/4W
    VBT3080C-M3/4W
    Vishay Semiconductor Diodes Division
    22 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    Tube
    TMBS®
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    -
    -
    FREE WHEELING DIODE, LOW POWER LOSS
    8541.10.00.80
    -
    SINGLE
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    R-PSSO-G2
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    700μA @ 80V
    820mV @ 15A
    -
    -
    -55°C~150°C
    -
    EFFICIENCY
    80V
    15A
    1
    -
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    2017
    150°C
    150A
    700μA
    VBT3080C-E3/8W vs VBT3080C-M3/4W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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