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MBR30035CTR

GeneSiC Semiconductor MBR30035CTR

Part Number:
MBR30035CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2415502-MBR30035CTR
Description:
DIODE MODULE 35V 300A 2TOWER
ECAD Model:
Datasheet:
MBR30035CTR

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Specifications
GeneSiC Semiconductor MBR30035CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR30035CTR.
  • Factory Lead Time
    4 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2003
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    1mA @ 35V
  • Voltage - Forward (Vf) (Max) @ If
    700mV @ 150A
  • Forward Current
    150A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    2.5kA
  • Application
    POWER
  • Forward Voltage
    650mV
  • Max Reverse Voltage (DC)
    35V
  • Average Rectified Current
    300A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    35V
  • Diode Configuration
    1 Pair Common Anode
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
Description
MBR30035CTR Overview
In the case of 650mV forward voltage, the device will operate.Array is important to monArrayor the surge current and make sure that Array does not exceed 2.5kA.In the case of 150A forward voltage, the device will operate.Powered by reverse voltage, this device has a peak voltage of 1A.This semiconductor device's maximal reverse leakage current is 1μA kA, which is its reverse leakage current when reverse biased.

MBR30035CTR Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A


MBR30035CTR Applications
There are a lot of GeneSiC Semiconductor
MBR30035CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR30035CTR More Descriptions
35V 300A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Schottky Diodes & Rectifiers 35V 300A Schottky Recovery
DIODE, RECTIF, 35V, 300A, TWIN TOWER
DIODE MOD SCHOTT 35V 150A 2TOWER
SCHOTTKY RECTIFIER, 35V, 300A, Twin Tower; Repetitive Reverse Voltage Vrrm Max:35V; Forward Current If(AV):150A; Forward Voltage VF Max:650mV; Diode Module Configuration:Single; Product Range:-; Diode Case Style:Module RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MBR30035CTR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    REACH SVHC
    RoHS Status
    Lifecycle Status
    Pbfree Code
    JESD-30 Code
    Output Current-Max
    Current - Average Rectified (Io)
    Max Forward Surge Current (Ifsm)
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Subcategory
    Base Part Number
    Pin Count
    JEDEC-95 Code
    Peak Non-Repetitive Surge Current
    Radiation Hardening
    View Compare
  • MBR30035CTR
    MBR30035CTR
    GeneSiC Semiconductor
    4 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    2
    SILICON
    Bulk
    2003
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -40°C
    8541.10.00.80
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    2
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky, Reverse Polarity
    1mA @ 35V
    700mV @ 150A
    150A
    1μA
    -55°C~150°C
    2.5kA
    POWER
    650mV
    35V
    300A
    1
    1A
    35V
    1 Pair Common Anode
    No SVHC
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR30045CT
    MBR30045CT
    GeneSiC Semiconductor
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    -
    SILICON
    Bulk
    2012
    Active
    1 (Unlimited)
    2
    -
    175°C
    -40°C
    -
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    2
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    8mA @ 20V
    650mV @ 150A
    300A
    -
    -
    -
    POWER
    750mV
    45V
    300A
    1
    1μA
    45V
    1 Pair Common Cathode
    -
    RoHS Compliant
    PRODUCTION (Last Updated: 6 months ago)
    yes
    R-PUFM-X2
    150A
    300A DC
    2.5kA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MBR30035CTR vs MBR30045CT
  • MBR300100CTR
    MBR300100CTR
    GeneSiC Semiconductor
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    -
    SILICON
    Bulk
    -
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -40°C
    8541.10.00.80
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    2
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    8mA @ 20V
    840mV @ 150A
    300A
    1μA
    -
    2.5kA
    POWER
    -
    100V
    300A
    1
    1A
    100V
    1 Pair Common Anode
    -
    RoHS Compliant
    PRODUCTION (Last Updated: 6 months ago)
    yes
    R-PUFM-X2
    150A
    300A DC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MBR30035CTR vs MBR300100CTR
  • MBR3035PT-E3/45
    MBR3035PT-E3/45
    Vishay Semiconductor Diodes Division
    10 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    SILICON
    Tube
    2011
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -65°C
    8541.10.00.80
    SINGLE
    -
    -
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 35V
    760mV @ 30A
    30A
    1mA
    -65°C~150°C
    200A
    EFFICIENCY
    -
    35V
    30A
    1
    1mA
    35V
    1 Pair Common Cathode
    -
    ROHS3 Compliant
    -
    yes
    -
    15A
    -
    -
    e3
    Matte Tin (Sn)
    FREE WHEELING DIODE, LOW POWER LOSS
    Rectifier Diodes
    MBR3035PT
    2
    TO-247AD
    200A
    No
    MBR30035CTR vs MBR3035PT-E3/45
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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