MBR30040CTR

GeneSiC Semiconductor MBR30040CTR

Part Number:
MBR30040CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2419993-MBR30040CTR
Description:
DIODE MODULE 40V 300A 2TOWER
ECAD Model:
Datasheet:
MBR30040CTR

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Specifications
GeneSiC Semiconductor MBR30040CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR30040CTR.
  • Factory Lead Time
    4 Weeks
  • Mount
    Chassis Mount, Through Hole
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    Solder
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Pitch
    4.2mm
  • Terminal Position
    UPPER
  • Orientation
    Straight
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Contacts
    14
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    8mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    650mV @ 150A
  • Max Voltage Rating (DC)
    600.6kV
  • Forward Current
    300A
  • Max Reverse Leakage Current
    1μA
  • Max Surge Current
    2.5kA
  • Output Current-Max
    150A
  • Application
    POWER
  • Current - Average Rectified (Io)
    300A DC
  • Max Reverse Voltage (DC)
    40V
  • Average Rectified Current
    300A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    40V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MBR30040CTR Overview
A maximum output voltage of 150A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 2.5kA.The device operates when the forward voltage is set to 300A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBR30040CTR Features
a maximum output voltage of 150A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR30040CTR Applications
There are a lot of GeneSiC Semiconductor
MBR30040CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR30040CTR More Descriptions
40V 300A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 40V 150A 2TOWER
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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