MBR300100CTR

GeneSiC Semiconductor MBR300100CTR

Part Number:
MBR300100CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2419983-MBR300100CTR
Description:
DIODE MODULE 100V 300A 2TOWER
ECAD Model:
Datasheet:
MBR300100CTR

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Specifications
GeneSiC Semiconductor MBR300100CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR300100CTR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    8mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    840mV @ 150A
  • Forward Current
    300A
  • Max Reverse Leakage Current
    1μA
  • Max Surge Current
    2.5kA
  • Output Current-Max
    150A
  • Application
    POWER
  • Current - Average Rectified (Io)
    300A DC
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    300A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MBR300100CTR Overview
An output voltage of 150A is the maximum it can handle.Maintaining a surge current under 2.5kA and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 300A to operate the device.A reverse voltage peak of 1A is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.

MBR300100CTR Features
a maximum output voltage of 150A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR300100CTR Applications
There are a lot of GeneSiC Semiconductor
MBR300100CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR300100CTR More Descriptions
100V 300A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 300A100P/70R
SCHOTTKY RECTIFIER, COMN AND, 100V, 300A, 2-TOWER; Diode Module Configuration:1 Pair Common Anode; Forward Current If(AV):300A; Forward Voltage VF Max:840mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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