Fairchild/ON Semiconductor KSC2752OSTU
- Part Number:
- KSC2752OSTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465513-KSC2752OSTU
- Description:
- TRANS NPN 400V 0.5A TO-126
- ECAD Model:
-
- Datasheet:
- KSC2752OSTU
Fairchild/ON Semiconductor KSC2752OSTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSC2752OSTU.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time19 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight761mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation1W
- Current Rating500mA
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 5V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 60mA, 300mA
- Collector Emitter Breakdown Voltage400V
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)500V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- Height11mm
- Length8mm
- Width3.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSC2752OSTU Overview
In this device, the DC current gain is 30 @ 50mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 60mA, 300mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).Maximum collector currents can be below 500mA volts.
KSC2752OSTU Features
the DC current gain for this device is 30 @ 50mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 60mA, 300mA
the emitter base voltage is kept at 7V
the current rating of this device is 500mA
KSC2752OSTU Applications
There are a lot of ON Semiconductor
KSC2752OSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 30 @ 50mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 60mA, 300mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).Maximum collector currents can be below 500mA volts.
KSC2752OSTU Features
the DC current gain for this device is 30 @ 50mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 60mA, 300mA
the emitter base voltage is kept at 7V
the current rating of this device is 500mA
KSC2752OSTU Applications
There are a lot of ON Semiconductor
KSC2752OSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSC2752OSTU More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
KSC Series NPN 10 W 400 V 0.5 A Through Hole Epitaxial Transistor - TO-126
Trans GP BJT NPN 400V 0.5A 1000mW 3-Pin(3 Tab) TO-126 Tube
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANSISTOR, NPN, 400V, 0.5A, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 10W; DC Collector Current: 500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
KSC Series NPN 10 W 400 V 0.5 A Through Hole Epitaxial Transistor - TO-126
Trans GP BJT NPN 400V 0.5A 1000mW 3-Pin(3 Tab) TO-126 Tube
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANSISTOR, NPN, 400V, 0.5A, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 10W; DC Collector Current: 500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to KSC2752OSTU.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusConfigurationPower - MaxJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionSupplier Device PackageView Compare
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KSC2752OSTUACTIVE (Last Updated: 3 days ago)19 WeeksThrough HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJTube2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors400V1W500mA1Single1WSWITCHINGNPNNPN400V500mA30 @ 50mA 5V10μA ICBO1V @ 60mA, 300mA400V1V500V7V2011mm8mm3.25mmNoROHS3 CompliantLead Free------------------ -
---Through HoleTO-220-3--SILICON150°C TJBulk-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN----1--AMPLIFIERNPNNPN--40 @ 500mA 10V10μA ICBO1V @ 50mA, 500mA---------RoHS Compliant-NO8541.29.00.95SINGLENOT APPLICABLEcompliantNOT APPLICABLEKSC2073R-PSFM-T3Not QualifiedSINGLE25WTO-220AB150V1.5A4MHz4MHz-
-
---Through HoleTO-220-3---150°C TJTube---Obsolete1 (Unlimited)------------NPN--70 @ 3A 5V10μA ICBO600mV @ 500mA, 5A-----------------KSC2334---1.5W-100V7A---
-
---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJTape & Box (TB)---Obsolete1 (Unlimited)------------NPN--200 @ 100mA 1V100nA ICBO400mV @ 50mA, 500mA-----------------KSC2710---300mW-20V500mA--TO-92S
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