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JANTXV2N6353

Microsemi Corporation JANTXV2N6353

Part Number:
JANTXV2N6353
Manufacturer:
Microsemi Corporation
Ventron No:
2470679-JANTXV2N6353
Description:
TRANS NPN DARL 150V 5A TO-33
ECAD Model:
Datasheet:
JANTXV2N6353

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Specifications
Microsemi Corporation JANTXV2N6353 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N6353.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-213AA, TO-66-2
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/472
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    4
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Power - Max
    2W
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    150V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 5A 5V
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 10mA, 5A
  • Current - Collector (Ic) (Max)
    5A
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    2.5V
  • Collector Base Voltage (VCBO)
    150V
  • Emitter Base Voltage (VEBO)
    12V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTXV2N6353 Overview
This device has a DC current gain of 1000 @ 5A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 12V to achieve high efficiency.In this part, there is a transition frequency of 50MHz.

JANTXV2N6353 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz


JANTXV2N6353 Applications
There are a lot of Microsemi Corporation
JANTXV2N6353 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N6353 More Descriptions
JANTXV Series 150 V 1 A NPN Power Silicon Transistor - TO-213AA (TO-66)
Trans GP BJT NPN 150V 5A 2-Pin TO-66 Tray
Trans Darlington NPN 150V 5A 4-Pin(3 Tab) TO-213AA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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