Microsemi Corporation JANTXV2N6283

Name: JANTXV2N6283
Brand: Microsemi Corporation
SKU: 2466451-JANTXV2N6283
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTXV2N6283

Manufacturer:: Microsemi Corporation

Ventron No:: 2466451-JANTXV2N6283

Description:: TRANS NPN DARL 80V 20A TO3

ECAD Model:

Datasheet:: JANTXV2N6283

Specifications

Microsemi Corporation JANTXV2N6283 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N6283.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
20 Weeks
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/504
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
175W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
DC Current Gain (hFE) (Min) @ Ic, Vce
1250 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 200mA, 20A
Current - Collector (Ic) (Max)
20A
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
RoHS Status
Non-RoHS Compliant

Description

JANTXV2N6283 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1250 @ 10A 3V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.

JANTXV2N6283 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz

JANTXV2N6283 Applications
There are a lot of Microsemi Corporation
JANTXV2N6283 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTXV2N6283 More Descriptions

Non-Compliant Through Hole NPN Bulk TO-3 Lead, Tin Production (Last Updated: 2 months ago) 1
NPN Silicon Darlington Power Transistor 80VDC 2-Pin TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTXV2N6283
Trans Darlington NPN 80V 20A 3-Pin(2 Tab) TO-3
TRANS NPN DARL 80V 20A TO204AA

Certification