JANTXV2N5667

Microsemi Corporation JANTXV2N5667

Part Number:
JANTXV2N5667
Manufacturer:
Microsemi Corporation
Ventron No:
2466372-JANTXV2N5667
Description:
TRANS NPN 300V 5A TO5
ECAD Model:
Datasheet:
2N5664-65,66(S,U3),67(S)

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Specifications
Microsemi Corporation JANTXV2N5667 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N5667.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/455
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.2W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1.2W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 1A 5V
  • Current - Collector Cutoff (Max)
    200nA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 1A, 5A
  • Transition Frequency
    20MHz
  • Collector Base Voltage (VCBO)
    400V
  • Emitter Base Voltage (VEBO)
    6V
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTXV2N5667 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 20MHz in the part.When collector current reaches its maximum, it can reach 5A volts.

JANTXV2N5667 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz


JANTXV2N5667 Applications
There are a lot of Microsemi Corporation
JANTXV2N5667 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N5667 More Descriptions
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JANTXV Series 300 V 5 A NPN Power Silicon Switching Transistor - TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N5667
Non-Compliant Through Hole NPN Contains Lead Bulk TO-5 3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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