Microsemi Corporation JANTXV2N5667
- Part Number:
- JANTXV2N5667
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466372-JANTXV2N5667
- Description:
- TRANS NPN 300V 5A TO5
- Datasheet:
- 2N5664-65,66(S,U3),67(S)
Microsemi Corporation JANTXV2N5667 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N5667.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/455
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1.2W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1.2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A 5V
- Current - Collector Cutoff (Max)200nA
- Vce Saturation (Max) @ Ib, Ic1V @ 1A, 5A
- Transition Frequency20MHz
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)6V
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTXV2N5667 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 20MHz in the part.When collector current reaches its maximum, it can reach 5A volts.
JANTXV2N5667 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
JANTXV2N5667 Applications
There are a lot of Microsemi Corporation
JANTXV2N5667 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 20MHz in the part.When collector current reaches its maximum, it can reach 5A volts.
JANTXV2N5667 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
JANTXV2N5667 Applications
There are a lot of Microsemi Corporation
JANTXV2N5667 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N5667 More Descriptions
Trans GP BJT NPN 300V 5A 1200mW 3-Pin TO-5 Bag
JANTXV Series 300 V 5 A NPN Power Silicon Switching Transistor - TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N5667
Non-Compliant Through Hole NPN Contains Lead Bulk TO-5 3
JANTXV Series 300 V 5 A NPN Power Silicon Switching Transistor - TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N5667
Non-Compliant Through Hole NPN Contains Lead Bulk TO-5 3
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