Microsemi Corporation JANTXV2N3637UB

Name: JANTXV2N3637UB
Brand: Microsemi Corporation
SKU: 2466407-JANTXV2N3637UB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTXV2N3637UB

Manufacturer:: Microsemi Corporation

Ventron No:: 2466407-JANTXV2N3637UB

Description:: TRANS PNP 175V 1A

ECAD Model:

Datasheet:: JANTXV2N3637UB

Specifications

Microsemi Corporation JANTXV2N3637UB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N3637UB.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
23 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/357
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
175V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Collector Base Voltage (VCBO)
175V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTXV2N3637UB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.

JANTXV2N3637UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V

JANTXV2N3637UB Applications
There are a lot of Microsemi Corporation
JANTXV2N3637UB applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTXV2N3637UB More Descriptions

Military Bipolar (BJT) Transistor PNP 175V 1A 1.5W
Non-Compliant Surface Mount PNP 3 Production (Last Updated: 2 months ago) 1 W No
Military MIL-PRF-19500/357 Bulk Surface Mount PNP Bipolar (BJT) Transistor 100 @ 50mA 10V 10muA 1W 650ns
Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB Waffle

Certification