JANTXV2N3501

Microsemi Corporation JANTXV2N3501

Part Number:
JANTXV2N3501
Manufacturer:
Microsemi Corporation
Ventron No:
2466295-JANTXV2N3501
Description:
TRANS NPN 150V 0.3A
ECAD Model:
Datasheet:
JANTXV2N3501

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Specifications
Microsemi Corporation JANTXV2N3501 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N3501.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/366
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    150V
  • Max Collector Current
    300mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 15mA, 150mA
  • Collector Emitter Breakdown Voltage
    150V
  • Transition Frequency
    150MHz
  • Collector Base Voltage (VCBO)
    150V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTXV2N3501 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.The maximum collector current is 300mA volts.

JANTXV2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


JANTXV2N3501 Applications
There are a lot of Microsemi Corporation
JANTXV2N3501 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N3501 More Descriptions
Military MIL-PRF-19500/366 Bulk Through Hole NPN Bipolar (BJT) Transistor 100 @ 150mA 10V 10muA ICBO 1W 150MHz
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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