Microsemi Corporation JANTXV2N3501
- Part Number:
- JANTXV2N3501
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466295-JANTXV2N3501
- Description:
- TRANS NPN 150V 0.3A
- Datasheet:
- JANTXV2N3501
Microsemi Corporation JANTXV2N3501 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N3501.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/366
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage150V
- Transition Frequency150MHz
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTXV2N3501 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.The maximum collector current is 300mA volts.
JANTXV2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
JANTXV2N3501 Applications
There are a lot of Microsemi Corporation
JANTXV2N3501 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.The maximum collector current is 300mA volts.
JANTXV2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
JANTXV2N3501 Applications
There are a lot of Microsemi Corporation
JANTXV2N3501 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N3501 More Descriptions
Military MIL-PRF-19500/366 Bulk Through Hole NPN Bipolar (BJT) Transistor 100 @ 150mA 10V 10muA ICBO 1W 150MHz
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
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