Aeroflex Metelics, Division of MACOM JANTXV2N3421
- Part Number:
- JANTXV2N3421
- Manufacturer:
- Aeroflex Metelics, Division of MACOM
- Ventron No:
- 2463618-JANTXV2N3421
- Description:
- DIODE
- Datasheet:
- JANTXV2N3421
Aeroflex Metelics, Division of MACOM JANTXV2N3421 technical specifications, attributes, parameters and parts with similar specifications to Aeroflex Metelics, Division of MACOM JANTXV2N3421.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/393
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A 2V
- Current - Collector Cutoff (Max)5μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Transition Frequency40MHz
- Collector Base Voltage (VCBO)125V
- Emitter Base Voltage (VEBO)8V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV2N3421 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.A transition frequency of 40MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
JANTXV2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 40MHz
JANTXV2N3421 Applications
There are a lot of Microsemi Corporation
JANTXV2N3421 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.A transition frequency of 40MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
JANTXV2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 40MHz
JANTXV2N3421 Applications
There are a lot of Microsemi Corporation
JANTXV2N3421 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N3421 More Descriptions
NPN Silicon Medium Power Transistor 80VDC 3-Pin TO-5 Bag
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N3421
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N3421
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