JANTXV2N3421

Aeroflex Metelics, Division of MACOM JANTXV2N3421

Part Number:
JANTXV2N3421
Manufacturer:
Aeroflex Metelics, Division of MACOM
Ventron No:
2463618-JANTXV2N3421
Description:
DIODE
ECAD Model:
Datasheet:
JANTXV2N3421

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Specifications
Aeroflex Metelics, Division of MACOM JANTXV2N3421 technical specifications, attributes, parameters and parts with similar specifications to Aeroflex Metelics, Division of MACOM JANTXV2N3421.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/393
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 1A 2V
  • Current - Collector Cutoff (Max)
    5μA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Transition Frequency
    40MHz
  • Collector Base Voltage (VCBO)
    125V
  • Emitter Base Voltage (VEBO)
    8V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV2N3421 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.A transition frequency of 40MHz is present in the part.Collector current can be as low as 3A volts at its maximum.

JANTXV2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 40MHz


JANTXV2N3421 Applications
There are a lot of Microsemi Corporation
JANTXV2N3421 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N3421 More Descriptions
NPN Silicon Medium Power Transistor 80VDC 3-Pin TO-5 Bag
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N3421
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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