JANTXV2N2946A

Microsemi Corporation JANTXV2N2946A

Part Number:
JANTXV2N2946A
Manufacturer:
Microsemi Corporation
Ventron No:
2845785-JANTXV2N2946A
Description:
TRANS PNP 35V 0.1A TO46
ECAD Model:
Datasheet:
JANTXV2N2946A

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Specifications
Microsemi Corporation JANTXV2N2946A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2946A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AB, TO-46-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/382
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    400mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    400mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    CHOPPER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    35V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 1mA 500mV
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Collector Emitter Breakdown Voltage
    35V
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    40V
  • Turn Off Time-Max (toff)
    450ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV2N2946A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 1mA 500mV.Emitter base voltages of 40V can achieve high levels of efficiency.A maximum collector current of 100mA volts can be achieved.

JANTXV2N2946A Features
the DC current gain for this device is 50 @ 1mA 500mV
the emitter base voltage is kept at 40V


JANTXV2N2946A Applications
There are a lot of Microsemi Corporation
JANTXV2N2946A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N2946A More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB
Trans GP BJT PNP 35V 0.1A 400mW 3-Pin TO-46 Bag
Non-Compliant Through Hole 2.16 mm 50 PNP Bulk TO-46
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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