Microsemi Corporation JANTXV2N2946A
- Part Number:
- JANTXV2N2946A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2845785-JANTXV2N2946A
- Description:
- TRANS PNP 35V 0.1A TO46
- Datasheet:
- JANTXV2N2946A
Microsemi Corporation JANTXV2N2946A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2946A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AB, TO-46-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/382
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation400mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation400mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationCHOPPER
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)35V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1mA 500mV
- Current - Collector Cutoff (Max)10μA ICBO
- Collector Emitter Breakdown Voltage35V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)40V
- Turn Off Time-Max (toff)450ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV2N2946A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 1mA 500mV.Emitter base voltages of 40V can achieve high levels of efficiency.A maximum collector current of 100mA volts can be achieved.
JANTXV2N2946A Features
the DC current gain for this device is 50 @ 1mA 500mV
the emitter base voltage is kept at 40V
JANTXV2N2946A Applications
There are a lot of Microsemi Corporation
JANTXV2N2946A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 1mA 500mV.Emitter base voltages of 40V can achieve high levels of efficiency.A maximum collector current of 100mA volts can be achieved.
JANTXV2N2946A Features
the DC current gain for this device is 50 @ 1mA 500mV
the emitter base voltage is kept at 40V
JANTXV2N2946A Applications
There are a lot of Microsemi Corporation
JANTXV2N2946A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N2946A More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB
Trans GP BJT PNP 35V 0.1A 400mW 3-Pin TO-46 Bag
Non-Compliant Through Hole 2.16 mm 50 PNP Bulk TO-46
Trans GP BJT PNP 35V 0.1A 400mW 3-Pin TO-46 Bag
Non-Compliant Through Hole 2.16 mm 50 PNP Bulk TO-46
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