Microsemi Corporation JANTXV2N2907AUB
- Part Number:
- JANTXV2N2907AUB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3585331-JANTXV2N2907AUB
- Description:
- TRANS PNP 60V 0.6A 4UB
Microsemi Corporation JANTXV2N2907AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2907AUB.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-SMD, No Lead
- Number of Pins3
- Supplier Device PackageUB
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/291
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityPNP
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTXV2N2907AUB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The product comes in the supplier device package of UB.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 600mA volts at its maximum.
JANTXV2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
JANTXV2N2907AUB Applications
There are a lot of Microsemi Corporation
JANTXV2N2907AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The product comes in the supplier device package of UB.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 600mA volts at its maximum.
JANTXV2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
JANTXV2N2907AUB Applications
There are a lot of Microsemi Corporation
JANTXV2N2907AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N2907AUB More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
JANTXV Series 60 V 600 mA SMT PNP Small Signal Silicon Transistor - 4UB
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle
JANTXV Series 60 V 600 mA SMT PNP Small Signal Silicon Transistor - 4UB
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle
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