JANTXV2N2907AUB

Microsemi Corporation JANTXV2N2907AUB

Part Number:
JANTXV2N2907AUB
Manufacturer:
Microsemi Corporation
Ventron No:
3585331-JANTXV2N2907AUB
Description:
TRANS PNP 60V 0.6A 4UB
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JANTXV2N2907AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2907AUB.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, No Lead
  • Number of Pins
    3
  • Supplier Device Package
    UB
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Number of Elements
    1
  • Polarity
    PNP
  • Power Dissipation
    500mW
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTXV2N2907AUB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The product comes in the supplier device package of UB.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 600mA volts at its maximum.

JANTXV2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB


JANTXV2N2907AUB Applications
There are a lot of Microsemi Corporation
JANTXV2N2907AUB applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N2907AUB More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
JANTXV Series 60 V 600 mA SMT PNP Small Signal Silicon Transistor - 4UB
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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