JANTXV2N2906A

Microsemi Corporation JANTXV2N2906A

Part Number:
JANTXV2N2906A
Manufacturer:
Microsemi Corporation
Ventron No:
2466213-JANTXV2N2906A
Description:
TRANS PNP 60V 0.6A TO18
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JANTXV2N2906A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2906A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Supplier Device Package
    TO-18
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    1.6V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Collector Base Voltage (VCBO)
    60V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV2N2906A Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Product comes in the supplier's device package TO-18.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

JANTXV2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18


JANTXV2N2906A Applications
There are a lot of Microsemi Corporation
JANTXV2N2906A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N2906A More Descriptions
Trans GP BJT PNP 60V 0.6A 3-Pin TO-18
Non-Compliant Through Hole Bulk TO-18-3 3 Production (Last Updated: 1 month ago) No 600 mA
Small-Signal BJT _ TO-18
TRANS PNP 60V 0.6A TO18
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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