Microsemi Corporation JANTXV2N2906A
- Part Number:
- JANTXV2N2906A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466213-JANTXV2N2906A
- Description:
- TRANS PNP 60V 0.6A TO18
Microsemi Corporation JANTXV2N2906A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2906A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-18
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/291
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1.6V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV2N2906A Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Product comes in the supplier's device package TO-18.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
JANTXV2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18
JANTXV2N2906A Applications
There are a lot of Microsemi Corporation
JANTXV2N2906A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Product comes in the supplier's device package TO-18.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
JANTXV2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18
JANTXV2N2906A Applications
There are a lot of Microsemi Corporation
JANTXV2N2906A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N2906A More Descriptions
Trans GP BJT PNP 60V 0.6A 3-Pin TO-18
Non-Compliant Through Hole Bulk TO-18-3 3 Production (Last Updated: 1 month ago) No 600 mA
Small-Signal BJT _ TO-18
TRANS PNP 60V 0.6A TO18
Non-Compliant Through Hole Bulk TO-18-3 3 Production (Last Updated: 1 month ago) No 600 mA
Small-Signal BJT _ TO-18
TRANS PNP 60V 0.6A TO18
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