Microsemi Corporation JANTXV2N2905A
- Part Number:
- JANTXV2N2905A
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466319-JANTXV2N2905A
- Description:
- TRANS PNP 60V 0.6A TO39
- Datasheet:
- JANTXV2N2905A
Microsemi Corporation JANTXV2N2905A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2905A.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/290
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation600mW
- Case ConnectionCOLLECTOR
- Power - Max800mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Turn On Time-Max (ton)45ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTXV2N2905A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.
JANTXV2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N2905A Applications
There are a lot of Microsemi Corporation
JANTXV2N2905A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.
JANTXV2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N2905A Applications
There are a lot of Microsemi Corporation
JANTXV2N2905A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N2905A More Descriptions
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin
JANTXV Series 60 V 600 mA Through Hole PNP Switching Silicon Transistor - TO-39
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag
JANTXV Series 60 V 600 mA Through Hole PNP Switching Silicon Transistor - TO-39
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag
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