JANTXV2N2905A

Microsemi Corporation JANTXV2N2905A

Part Number:
JANTXV2N2905A
Manufacturer:
Microsemi Corporation
Ventron No:
2466319-JANTXV2N2905A
Description:
TRANS PNP 60V 0.6A TO39
ECAD Model:
Datasheet:
JANTXV2N2905A

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Specifications
Microsemi Corporation JANTXV2N2905A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2905A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/290
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    600mW
  • Case Connection
    COLLECTOR
  • Power - Max
    800mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    200MHz
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn On Time-Max (ton)
    45ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTXV2N2905A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.

JANTXV2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


JANTXV2N2905A Applications
There are a lot of Microsemi Corporation
JANTXV2N2905A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N2905A More Descriptions
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin
JANTXV Series 60 V 600 mA Through Hole PNP Switching Silicon Transistor - TO-39
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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