Microsemi Corporation JANTXV2N2484
- Part Number:
- JANTXV2N2484
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466468-JANTXV2N2484
- Description:
- TRANS NPN 60V 0.05A TO18
- Datasheet:
- JANTXV2N2484
Microsemi Corporation JANTXV2N2484 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2484.
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/376
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation360mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation360mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce225 @ 10mA 5V
- Current - Collector Cutoff (Max)2nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 100μA, 1mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency60MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV2N2484 Overview
This device has a DC current gain of 225 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 60MHz.The maximum collector current is 50mA volts.
JANTXV2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
a transition frequency of 60MHz
JANTXV2N2484 Applications
There are a lot of Microsemi Corporation
JANTXV2N2484 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 225 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 60MHz.The maximum collector current is 50mA volts.
JANTXV2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
a transition frequency of 60MHz
JANTXV2N2484 Applications
There are a lot of Microsemi Corporation
JANTXV2N2484 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N2484 More Descriptions
2N2484 Series 60 V 50 mA 360 mW Through Hole NPN Silicon Transistor - TO-18
Trans GP BJT NPN 60V 0.05A 3-Pin TO-18
Non-Compliant Through Hole NPN Bulk TO-18 3 360 mW
Trans GP BJT NPN 60V 0.05A 3-Pin TO-18
Non-Compliant Through Hole NPN Bulk TO-18 3 360 mW
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