JANTXV2N2484

Microsemi Corporation JANTXV2N2484

Part Number:
JANTXV2N2484
Manufacturer:
Microsemi Corporation
Ventron No:
2466468-JANTXV2N2484
Description:
TRANS NPN 60V 0.05A TO18
ECAD Model:
Datasheet:
JANTXV2N2484

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Specifications
Microsemi Corporation JANTXV2N2484 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2484.
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/376
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    360mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    360mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    225 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    2nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 100μA, 1mA
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    60MHz
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV2N2484 Overview
This device has a DC current gain of 225 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 60MHz.The maximum collector current is 50mA volts.

JANTXV2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
a transition frequency of 60MHz


JANTXV2N2484 Applications
There are a lot of Microsemi Corporation
JANTXV2N2484 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N2484 More Descriptions
2N2484 Series 60 V 50 mA 360 mW Through Hole NPN Silicon Transistor - TO-18
Trans GP BJT NPN 60V 0.05A 3-Pin TO-18
Non-Compliant Through Hole NPN Bulk TO-18 3 360 mW
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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