Microsemi Corporation JANTXV2N2369AUB
- Part Number:
- JANTXV2N2369AUB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3069094-JANTXV2N2369AUB
- Description:
- TRANS NPN 15V TO18
- ECAD Model:
-
- Datasheet:
- JANTXV2N2369AUB
Microsemi Corporation JANTXV2N2369AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N2369AUB.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time23 Weeks
- MountSurface Mount, Through Hole
- Mounting TypeSurface Mount
- Package / Case4-SMD, No Lead
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/317
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation400mW
- Terminal PositionDUAL
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation360mW
- Power - Max400mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)15V
- Max Collector Current400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage15V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)4.5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV2N2369AUB Overview
DC current gain in this device equals 20 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.In extreme cases, the collector current can be as low as 400nA volts.
JANTXV2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
JANTXV2N2369AUB Applications
There are a lot of Microsemi Corporation
JANTXV2N2369AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 20 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.In extreme cases, the collector current can be as low as 400nA volts.
JANTXV2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
JANTXV2N2369AUB Applications
There are a lot of Microsemi Corporation
JANTXV2N2369AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N2369AUB More Descriptions
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Small-Signal BJT _ UB
Non-Compliant Surface Mount, Through Hole NPN TO-18-3 3 Production (Last Updated: 1 month ago) 360 mW 1
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TRANS NPN 20V UB
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