JANTXV2N1613L

Microsemi Corporation JANTXV2N1613L

Part Number:
JANTXV2N1613L
Manufacturer:
Microsemi Corporation
Ventron No:
3585239-JANTXV2N1613L
Description:
TRANS NPN 30V 0.5A TO-5
ECAD Model:
Datasheet:
JANTXV2N1613L

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Specifications
Microsemi Corporation JANTXV2N1613L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N1613L.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/181
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    800mW
  • Case Connection
    COLLECTOR
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • JEDEC-95 Code
    TO-5
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 15mA, 150mA
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV2N1613L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 15mA, 150mA.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

JANTXV2N1613L Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V


JANTXV2N1613L Applications
There are a lot of Microsemi Corporation
JANTXV2N1613L applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTXV2N1613L More Descriptions
Non-Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Trans GP BJT NPN 30V 500mA 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N1613L
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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