Microsemi Corporation JANTXV2N1613L
- Part Number:
- JANTXV2N1613L
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3585239-JANTXV2N1613L
- Description:
- TRANS NPN 30V 0.5A TO-5
- Datasheet:
- JANTXV2N1613L
Microsemi Corporation JANTXV2N1613L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N1613L.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/181
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-5
- Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV2N1613L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 15mA, 150mA.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
JANTXV2N1613L Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JANTXV2N1613L Applications
There are a lot of Microsemi Corporation
JANTXV2N1613L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 15mA, 150mA.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
JANTXV2N1613L Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JANTXV2N1613L Applications
There are a lot of Microsemi Corporation
JANTXV2N1613L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTXV2N1613L More Descriptions
Non-Compliant Through Hole NPN Bulk TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Trans GP BJT NPN 30V 500mA 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N1613L
Trans GP BJT NPN 30V 500mA 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTXV2N1613L
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