Microsemi Corporation JANTX2N930

Name: JANTX2N930
Brand: Microsemi Corporation
SKU: 2465289-JANTX2N930
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTX2N930

Manufacturer:: Microsemi Corporation

Ventron No:: 2465289-JANTX2N930

Description:: TRANS NPN 45V 0.03A

ECAD Model:

Datasheet:: JANTX2N930

Specifications

Microsemi Corporation JANTX2N930 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N930.

Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Factory Lead Time
23 Weeks
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/253
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
300mW
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10μA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
1V @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
RoHS Status
Non-RoHS Compliant

Description

JANTX2N930 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 30mA volts.

JANTX2N930 Features
the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

JANTX2N930 Applications
There are a lot of Microsemi Corporation
JANTX2N930 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTX2N930 More Descriptions

Trans GP BJT NPN 45V 0.03A 3-Pin TO-18
Small-Signal BJT _ TO-18

Certification