Microsemi Corporation JANTX2N6352
- Part Number:
- JANTX2N6352
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470687-JANTX2N6352
- Description:
- TRANS NPN DARL 80V 5A TO-33
- Datasheet:
- JANTX2N6352
Microsemi Corporation JANTX2N6352 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6352.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-213AA, TO-66-2
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/472
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count4
- JESD-30 CodeO-MBCY-W3
- Qualification StatusQualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 5A 5V
- Vce Saturation (Max) @ Ib, Ic1.5V @ 5mA, 5A
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1.5V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)12V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N6352 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 5A 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 5mA, 5A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
JANTX2N6352 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz
JANTX2N6352 Applications
There are a lot of Microsemi Corporation
JANTX2N6352 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 5A 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 5mA, 5A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
JANTX2N6352 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz
JANTX2N6352 Applications
There are a lot of Microsemi Corporation
JANTX2N6352 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N6352 More Descriptions
Compliant Through Hole NPN Contains Lead Bulk 4 Production (Last Updated: 1 month ago)
2N6352 Series 80 V 5 A NPN Darlington Power Silicon Transistor - TO-213AA
Trans Darlington NPN 80V 5A 2000mW 4-Pin(3 Tab) TO-66 Tray
2N6352 Series 80 V 5 A NPN Darlington Power Silicon Transistor - TO-213AA
Trans Darlington NPN 80V 5A 2000mW 4-Pin(3 Tab) TO-66 Tray
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