JANTX2N6352

Microsemi Corporation JANTX2N6352

Part Number:
JANTX2N6352
Manufacturer:
Microsemi Corporation
Ventron No:
2470687-JANTX2N6352
Description:
TRANS NPN DARL 80V 5A TO-33
ECAD Model:
Datasheet:
JANTX2N6352

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Specifications
Microsemi Corporation JANTX2N6352 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6352.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-213AA, TO-66-2
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/472
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    4
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Power - Max
    2W
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    2000 @ 5A 5V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 5mA, 5A
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    12V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N6352 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 5A 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 5mA, 5A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.Collector current can be as low as 5A volts at its maximum.

JANTX2N6352 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz


JANTX2N6352 Applications
There are a lot of Microsemi Corporation
JANTX2N6352 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N6352 More Descriptions
Compliant Through Hole NPN Contains Lead Bulk 4 Production (Last Updated: 1 month ago)
2N6352 Series 80 V 5 A NPN Darlington Power Silicon Transistor - TO-213AA
Trans Darlington NPN 80V 5A 2000mW 4-Pin(3 Tab) TO-66 Tray
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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