Microsemi Corporation JANTX2N6341

Name: JANTX2N6341
Brand: Microsemi Corporation
SKU: 2470572-JANTX2N6341
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTX2N6341

Manufacturer:: Microsemi Corporation

Ventron No:: 2470572-JANTX2N6341

Description:: TRANS NPN 150V 25A

ECAD Model:

Datasheet:: JANTX2N6341

Specifications

Microsemi Corporation JANTX2N6341 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6341.

Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/509
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
200W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
200W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10A 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 2.5A, 25A
Transition Frequency
40MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANTX2N6341 Overview
This device has a DC current gain of 30 @ 10A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.8V @ 2.5A, 25A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 40MHz.A maximum collector current of 25A volts is possible.

JANTX2N6341 Features
the DC current gain for this device is 30 @ 10A 2V
the vce saturation(Max) is 1.8V @ 2.5A, 25A
the emitter base voltage is kept at 6V
a transition frequency of 40MHz

JANTX2N6341 Applications
There are a lot of Microsemi Corporation
JANTX2N6341 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANTX2N6341 More Descriptions

Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Trans GP BJT NPN 150V 25A 2-Pin TO-3 - Trays
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N6341
Non-Compliant Through Hole NPN Bulk TO-3 3 200 W 1

Certification