Microsemi Corporation JANTX2N6298
- Part Number:
- JANTX2N6298
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464838-JANTX2N6298
- Description:
- TRANS PNP DARL 60V 8A TO-66
- ECAD Model:
-
- Datasheet:
- JANTX2N6298
Microsemi Corporation JANTX2N6298 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6298.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-213AA, TO-66-2
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/540
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count3
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Power - Max64W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A 3V
- Current - Collector Cutoff (Max)500μA
- Vce Saturation (Max) @ Ib, Ic2V @ 80mA, 8A
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N6298 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 4A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 8A volts.
JANTX2N6298 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTX2N6298 Applications
There are a lot of Microsemi Corporation
JANTX2N6298 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 4A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 8A volts.
JANTX2N6298 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTX2N6298 Applications
There are a lot of Microsemi Corporation
JANTX2N6298 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N6298 More Descriptions
JANTX Series 60 V 8 A 64 W High Speed PNP Transistor - (TO-213AA) TO-66-2
Trans Darlington PNP 60V 8A 64000mW 3-Pin(2 Tab) TO-66 Tray
Compliant Through Hole PNP Contains Lead Bulk TO-66 Lead, Tin
Trans Darlington PNP 60V 8A 64000mW 3-Pin(2 Tab) TO-66 Tray
Compliant Through Hole PNP Contains Lead Bulk TO-66 Lead, Tin
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