Microsemi Corporation JANTX2N6287

JANTX2N6287 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1500 @ 1A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 200mA, 20A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.TO-204AA (TO-3) is the supplier device package for this product.This device displays a 100V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 20A volts.

JANTX2N6287 Features
the DC current gain for this device is 1500 @ 1A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
the supplier device package of TO-204AA (TO-3)


JANTX2N6287 Applications
There are a lot of American Microsemiconductor, Inc.
JANTX2N6287 applications of single BJT transistors.


Inverter
Interface
Driver
Muting