Microsemi Corporation JANTX2N6251
- Part Number:
- JANTX2N6251
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464097-JANTX2N6251
- Description:
- TRANS NPN 350V 10A TO-3
- ECAD Model:
-
- Datasheet:
- JANTX2N6251
Microsemi Corporation JANTX2N6251 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6251.
- Factory Lead Time20 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/510
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation5.5W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation6W
- Case ConnectionCOLLECTOR
- Power - Max5.5W
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 10A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 1.67A, 10A
- Collector Emitter Breakdown Voltage350V
- Collector Base Voltage (VCBO)450V
- Emitter Base Voltage (VEBO)6V
- Turn Off Time-Max (toff)4500ns
- Turn On Time-Max (ton)2000ns
- Collector-Base Capacitance-Max500pF
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N6251 Overview
In this device, the DC current gain is 6 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.67A, 10A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.
JANTX2N6251 Features
the DC current gain for this device is 6 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.67A, 10A
the emitter base voltage is kept at 6V
JANTX2N6251 Applications
There are a lot of Microsemi Corporation
JANTX2N6251 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 6 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.67A, 10A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.
JANTX2N6251 Features
the DC current gain for this device is 6 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.67A, 10A
the emitter base voltage is kept at 6V
JANTX2N6251 Applications
There are a lot of Microsemi Corporation
JANTX2N6251 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N6251 More Descriptions
Trans GP BJT NPN 350V 10A 3-Pin(2 Tab) TO-3
NPN Silicon Power Transistor 350VDC 2-Pin TO-3 Tray
Compliant Through Hole NPN Contains Lead Bulk TO-3 Lead, Tin Production (Last Updated: 1 month ago)
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N6251
NPN Silicon Power Transistor 350VDC 2-Pin TO-3 Tray
Compliant Through Hole NPN Contains Lead Bulk TO-3 Lead, Tin Production (Last Updated: 1 month ago)
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N6251
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